@article{CharronCironeNegrettietal.2006, author = {Charron, Eric and Cirone, M. A. and Negretti, Antonio and Schmiedmayer, J{\"o}rg and Calarco, Tommaso}, title = {Theoretical analysis of a realistic atom-chip quantum gate}, issn = {1050-2947}, year = {2006}, abstract = {We present a detailed, realistic analysis of the implementation of a proposal for a quantum phase gate based on atomic vibrational states, specializing it to neutral rubidium atoms on atom chips. We show how to create a double-well potential with static currents on the atom chips, using for all relevant parameters values that are achieved with present technology. The potential barrier between the two wells can be modified by varying the currents in order to realize a quantum phase gate for qubit states encoded in the atomic external degree of freedom. The gate performance is analyzed through numerical simulations; the operation time is similar to 10 ms with a performance fidelity above 99.9\%. For storage of the state between the operations the qubit state can be transferred efficiently via Raman transitions to two hyperfine states, where its decoherence is strongly inhibited. In addition we discuss the limits imposed by the proximity of the surface to the gate fidelity.}, language = {en} } @article{CironeNegrettiCalarcoetal.2005, author = {Cirone, M. A. and Negretti, Antonio and Calarco, T. and Kr{\"u}ger, P. and Schmiedmayer, J{\"o}rg}, title = {A simple quantum gate with atom chips}, year = {2005}, abstract = {We present a simple scheme for implementing an atomic phase gate using two degrees of freedom for each atom and discuss its realization with cold rubidium atoms on atom chips. We investigate the performance of this collisional phase gate and show that gate operations with high fidelity can be realized in magnetic traps that are currently available on atom chips}, language = {en} } @article{FolmanKruegerSchmiedmayeretal.2002, author = {Folman, R. and Kr{\"u}ger, P. and Schmiedmayer, J{\"o}rg and Denschlag, J. H. and Henkel, Carsten}, title = {Microscopic atom optics : from wires to an atom chip}, year = {2002}, abstract = {We review the 10 year long journey into the miniaturization and integration of matter wave optics resulting in devices mounted on surfaces, so called atom chips. The first experiments started with the guiding of atoms with free standing wires and investigated the trapping potentials in simple geometries. Atom optical elements can now be micro fabricated down to 1 um size on atom chips. The creation of a Bose-Einstein condensate miniaturized in surface traps was recently achieved, and the first attempts to integrate light optics are in progress. In this review, we describe microscopic atom optics elements using current carrying and charged structures. Experiments with free standing structures (atom wires)are reviewed, investigating the basic principles of microscopic atom optics. We then discuss the miniaturization on the atom chip. One of the open central questions is dealt with: what happens with cold atoms close to a warm surface, how fast will they heat up or lose their coherence? The review concludes with an outlook of what we believe the future directions to be, and what can be hoped for.}, language = {en} } @article{HenkelKruegerFolmanetal.2003, author = {Henkel, Carsten and Kr{\"u}ger, P. and Folman, R. and Schmiedmayer, J{\"o}rg}, title = {Fundamental limits for coherent manipulation on atom chips}, issn = {0946-2171}, year = {2003}, language = {en} } @article{ZhangHenkelHalleretal.2005, author = {Zhang, B. and Henkel, Carsten and Haller, E. and Wildermuth, S. and Hofferberth, S. and Kruger, P. and Schmiedmayer, J{\"o}rg}, title = {Relevance of sub-surface chip layers for the lifetime of magnetically trapped atoms}, year = {2005}, abstract = {We investigate the lifetime of magnetically trapped atoms above a planar, layered atom chip structure. Numerical calculations of the thermal magnetic noise spectrum are performed, based on the exact magnetic Green function and multi layer reflection coefficients. We have performed lifetime measurements where the center of a side guide trap is laterally shifted with respect to the current carrying wire using additional bias fields. Comparing the experiment to theory, we find a fair agreement and demonstrate that for a chip whose topmost layer is metallic, the magnetic noise depends essentially on the thickness of that layer, as long as the layers below have a, much smaller conductivity; essentially the same magnetic noise would be obtained with a metallic membrane suspended in vacuum. Based on our theory we give general scaling laws of how to reduce the effect of surface magnetic noise on the trapped atoms}, language = {en} }