@article{MaassUtechtStremlauetal.2017,
  author    = {Maass, Friedrich and Utecht, Manuel Martin and Stremlau, Stephan and Gille, Marie and Schwarz, Jutta and Hecht, Stefan and Klamroth, Tillmann and Tegeder, Petra},
  title     = {Electronic structure changes during the on-surface synthesis of nitrogen-doped chevron-shaped graphene nanoribbons},
  series = {Physical review : B, Condensed matter and materials physics},
  volume    = {96},
  journal   = {Physical review : B, Condensed matter and materials physics},
  publisher = {American Physical Society},
  address   = {College Park},
  issn      = {2469-9950},
  doi       = {10.1103/PhysRevB.96.045434},
  pages     = {7},
  year      = {2017},
  abstract  = {Utilizing suitable precursor molecules, a thermally activated and surface-assisted synthesis results in the formation of defect-free graphene nanoribbons (GNRs), which exhibit electronic properties that are not present in extended graphene. Most importantly, they have a band gap in the order of a few electron volts, depending on the nanoribbon width. In this study, we investigate the electronic structure changes during the formation of GNRs, nitrogen-doped (singly and doubly N-doped) as well as non-N-doped chevron-shaped CGNRs on Au(111). Thus we determine the optical gaps of the precursor molecules, the intermediate nonaromatic polymers, and finally the aromatic GNRs, using high-resolution electron energy loss spectroscopy and density functional theory calculations. As expected, we find no influence of N-doping on the size of the optical gaps. The gap of the precursor molecules is around 4.5 eV. Polymerization leads to a reduction of the gap to a value of 3.2 eV due to elongation and thus enhanced delocalization. The CGNRs exhibit a band gap of 2.8 eV, thus the gap is further reduced in the nanoribbons, since they exhibit an extended delocalized pi-electron system.},
  language  = {en}
}