@article{GrischekCaprioglioZhangetal.2022, author = {Grischek, Max and Caprioglio, Pietro and Zhang, Jiahuan and Pena-Camargo, Francisco and Sveinbjornsson, Kari and Zu, Fengshuo and Menzel, Dorothee and Warby, Jonathan H. and Li, Jinzhao and Koch, Norbert and Unger, Eva and Korte, Lars and Neher, Dieter and Stolterfoht, Martin and Albrecht, Steve}, title = {Efficiency Potential and Voltage Loss of Inorganic CsPbI2Br Perovskite Solar Cells}, series = {Solar RRL}, volume = {6}, journal = {Solar RRL}, number = {11}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {2367-198X}, doi = {10.1002/solr.202200690}, pages = {12}, year = {2022}, abstract = {Inorganic perovskite solar cells show excellent thermal stability, but the reported power conversion efficiencies are still lower than for organic-inorganic perovskites. This is mainly caused by lower open-circuit voltages (V(OC)s). Herein, the reasons for the low V-OC in inorganic CsPbI2Br perovskite solar cells are investigated. Intensity-dependent photoluminescence measurements for different layer stacks reveal that n-i-p and p-i-n CsPbI2Br solar cells exhibit a strong mismatch between quasi-Fermi level splitting (QFLS) and V-OC. Specifically, the CsPbI2Br p-i-n perovskite solar cell has a QFLS-e center dot V-OC mismatch of 179 meV, compared with 11 meV for a reference cell with an organic-inorganic perovskite of similar bandgap. On the other hand, this study shows that the CsPbI2Br films with a bandgap of 1.9 eV have a very low defect density, resulting in an efficiency potential of 20.3\% with a MeO-2PACz hole-transporting layer and 20.8\% on compact TiO2. Using ultraviolet photoelectron spectroscopy measurements, energy level misalignment is identified as a possible reason for the QFLS-e center dot V-OC mismatch and strategies for overcoming this V-OC limitation are discussed. This work highlights the need to control the interfacial energetics in inorganic perovskite solar cells, but also gives promise for high efficiencies once this issue is resolved.}, language = {en} } @article{ZuWarbyStolterfohtetal.2021, author = {Zu, Fengshuo and Warby, Jonathan and Stolterfoht, Martin and Li, Jinzhao and Shin, Dongguen and Unger, Eva and Koch, Norbert}, title = {Photoinduced energy-level realignment at interfaces between organic semiconductors and metal-halide perovskites}, series = {Physical review letters}, volume = {127}, journal = {Physical review letters}, number = {24}, publisher = {American Physical Society}, address = {College Park}, issn = {0031-9007}, doi = {10.1103/PhysRevLett.127.246401}, pages = {6}, year = {2021}, abstract = {In contrast to the common conception that the interfacial energy-level alignment is affixed once the interface is formed, we demonstrate that heterojunctions between organic semiconductors and metal-halide perovskites exhibit huge energy-level realignment during photoexcitation. Importantly, the photoinduced level shifts occur in the organic component, including the first molecular layer in direct contact with the perovskite. This is caused by charge-carrier accumulation within the organic semiconductor under illumination and the weak electronic coupling between the junction components.}, language = {en} } @article{ZhaoOpitzEljarratetal.2021, author = {Zhao, Yuhang and Opitz, Andreas and Eljarrat, Alberto and Kochovski, Zdravko and Koch, Christoph and Koch, Norbert and Lu, Yan}, title = {Kinetic study on the adsorption of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane on Ag nanoparticles in chloroform}, series = {ACS applied nano materials}, volume = {4}, journal = {ACS applied nano materials}, number = {11}, publisher = {American Chemical Society}, address = {Washington}, issn = {2574-0970}, doi = {10.1021/acsanm.1c02153}, pages = {11625 -- 11635}, year = {2021}, abstract = {In this study, the kinetics of the adsorption of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) on the surface of Ag nanoparticles (Ag NPs) in chloroform has been intensively investigated, as molecular doping is known to play a crucial role in organic electronic devices. Based on the results obtained from UV-visible (vis)-near-infrared (NIR) absorption spectroscopy, cryogenic transmission electron microscopy, scanning nanobeam electron diffraction, and electron energy loss spectroscopy, a two-step interaction kinetics has been proposed for the Ag NPs and F(4)TCNQ molecules, which includes the first step of electron transfer from Ag NPs to F(4)TCNQ indicated by the ionization of F(4)TCNQ and the second step of the formation of a Ag-F(4)TCNQ complex. The whole process has been followed via UV-vis-NIR absorption spectroscopy, which reveals distinct kinetics at two stages: the instantaneous ionization and the long-term complex formation. The kinetics and the influence of the molar ratio of Ag NPs/F(4)TCNQ molecules on the interaction between Ag NPs and F(4)TCNQ molecules in an organic solution are reported herein for the first time. Furthermore, the control experiment with silica-coated Ag NPs manifests that the charge transfer at the surface between Ag NPs and F(4)TCNQ molecules is prohibited by a silica layer of 18 nm.}, language = {en} } @article{MansourLungwitzSchultzetal.2020, author = {Mansour, Ahmed E. and Lungwitz, Dominique and Schultz, Thorsten and Arvind, Malavika and Valencia, Ana M. and Cocchi, Caterina and Opitz, Andreas and Neher, Dieter and Koch, Norbert}, title = {The optical signatures of molecular-doping induced polarons in poly(3-hexylthiophene-2,5-diyl)}, series = {Journal of materials chemistry : C, Materials for optical and electronic devices}, volume = {8}, journal = {Journal of materials chemistry : C, Materials for optical and electronic devices}, number = {8}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {2050-7526}, doi = {10.1039/c9tc06509a}, pages = {2870 -- 2879}, year = {2020}, abstract = {Optical absorption spectroscopy is a key method to investigate doped conjugated polymers and to characterize the doping-induced charge carriers, i.e., polarons. For prototypical poly(3-hexylthiophene-2,5-diyl) (P3HT), the absorption intensity of molecular dopant induced polarons is widely used to estimate the carrier density and the doping efficiency, i.e., the number of polarons formed per dopant molecule. However, the dependence of the polaron-related absorption features on the structure of doped P3HT, being either aggregates or separated individual chains, is not comprehensively understood in contrast to the optical absorption features of neutral P3HT. In this work, we unambiguously differentiate the optical signatures of polarons on individual P3HT chains and aggregates in solution, notably the latter exhibiting the same shape as aggregates in solid thin films. This is enabled by employing tris(pentafluorophenyl)borane (BCF) as dopant, as this dopant forms only ion pairs with P3HT and no charge transfer complexes, and BCF and its anion have no absorption in the spectral region of P3HT polarons. Polarons on individual chains exhibit absorption peaks at 1.5 eV and 0.6 eV, whereas in aggregates the high-energy peak is split into a doublet 1.3 eV and 1.65 eV, and the low-energy peak is shifted below 0.5 eV. The dependence of the fraction of solvated individual chains versus aggregates on absolute solution concentration, dopant concentration, and temperature is elucidated, and we find that aggregates predominate in solution under commonly used processing conditions. Aggregates in BCF-doped P3HT solution can be effectively removed upon simple filtering. From varying the filter pore size (down to 200 nm) and thin film morphology characterization with scanning force microscopy we reveal the aggregates' size dependence on solution absolute concentration and dopant concentration. Furthermore, X-ray photoelectron spectroscopy shows that the dopant loading in aggregates is higher than for individual P3HT chains. The results of this study help understanding the impact of solution pre-aggregation on thin film properties of molecularly doped P3HT, and highlight the importance of considering such aggregation for other doped conjugated polymers in general.}, language = {en} } @article{ZuSchultzWolffetal.2020, author = {Zu, Fengshuo and Schultz, Thorsten and Wolff, Christian Michael and Shin, Dongguen and Frohloff, Lennart and Neher, Dieter and Amsalem, Patrick and Koch, Norbert}, title = {Position-locking of volatile reaction products by atmosphere and capping layers slows down photodecomposition of methylammonium lead triiodide perovskite}, series = {RSC Advances}, volume = {10}, journal = {RSC Advances}, number = {30}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {2046-2069}, doi = {10.1039/d0ra03572f}, pages = {17534 -- 17542}, year = {2020}, abstract = {The remarkable progress of metal halide perovskites in photovoltaics has led to the power conversion efficiency approaching 26\%. However, practical applications of perovskite-based solar cells are challenged by the stability issues, of which the most critical one is photo-induced degradation. Bare CH3NH3PbI3 perovskite films are known to decompose rapidly, with methylammonium and iodine as volatile species and residual solid PbI2 and metallic Pb, under vacuum under white light illumination, on the timescale of minutes. We find, in agreement with previous work, that the degradation is non-uniform and proceeds predominantly from the surface, and that illumination under N-2 and ambient air (relative humidity 20\%) does not induce substantial degradation even after several hours. Yet, in all cases the release of iodine from the perovskite surface is directly identified by X-ray photoelectron spectroscopy. This goes in hand with a loss of organic cations and the formation of metallic Pb. When CH3NH3PbI3 films are covered with a few nm thick organic capping layer, either charge selective or non-selective, the rapid photodecomposition process under ultrahigh vacuum is reduced by more than one order of magnitude, and becomes similar in timescale to that under N-2 or air. We conclude that the light-induced decomposition reaction of CH3NH3PbI3, leading to volatile methylammonium and iodine, is largely reversible as long as these products are restrained from leaving the surface. This is readily achieved by ambient atmospheric pressure, as well as a thin organic capping layer even under ultrahigh vacuum. In addition to explaining the impact of gas pressure on the stability of this perovskite, our results indicate that covalently "locking" the position of perovskite components at the surface or an interface should enhance the overall photostability.}, language = {en} } @article{RaoufiHoermannLigorioetal.2020, author = {Raoufi, Meysam and H{\"o}rmann, Ulrich and Ligorio, Giovanni and Hildebrandt, Jana and P{\"a}tzel, Michael and Schultz, Thorsten and Perdigon-Toro, Lorena and Koch, Norbert and List-Kratochvil, Emil and Hecht, Stefan and Neher, Dieter}, title = {Simultaneous effect of ultraviolet radiation and surface modification on the work function and hole injection properties of ZnO thin films}, series = {Physica Status Solidi. A , Applications and materials science}, volume = {217}, journal = {Physica Status Solidi. A , Applications and materials science}, number = {5}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1862-6300}, doi = {10.1002/pssa.201900876}, pages = {1 -- 6}, year = {2020}, abstract = {The combined effect of ultraviolet (UV) light soaking and self-assembled monolayer deposition on the work function (WF) of thin ZnO layers and on the efficiency of hole injection into the prototypical conjugated polymer poly(3-hexylthiophen-2,5-diyl) (P3HT) is systematically investigated. It is shown that the WF and injection efficiency depend strongly on the history of UV light exposure. Proper treatment of the ZnO layer enables ohmic hole injection into P3HT, demonstrating ZnO as a potential anode material for organic optoelectronic devices. The results also suggest that valid conclusions on the energy-level alignment at the ZnO/organic interfaces may only be drawn if the illumination history is precisely known and controlled. This is inherently problematic when comparing electronic data from ultraviolet photoelectron spectroscopy (UPS) measurements carried out under different or ill-defined illumination conditions.}, language = {en} } @article{HoermannZeiskeParketal.2019, author = {H{\"o}rmann, Ulrich and Zeiske, Stefan and Park, Soohyung and Schultz, Thorsten and Kickhoefel, Sebastian and Scherf, Ullrich and Blumstengel, Sylke and Koch, Norbert and Neher, Dieter}, title = {Direct observation of state-filling at hybrid tin oxide/organic interfaces}, series = {Applied physics letters}, volume = {114}, journal = {Applied physics letters}, number = {18}, publisher = {American Institute of Physics}, address = {Melville}, issn = {0003-6951}, doi = {10.1063/1.5082704}, pages = {5}, year = {2019}, abstract = {Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blue-shift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor. Published under license by AIP Publishing.}, language = {en} } @article{StolterfohtCaprioglioWolffetal.2019, author = {Stolterfoht, Martin and Caprioglio, Pietro and Wolff, Christian Michael and Marquez, Jose A. and Nordmann, Joleik and Zhang, Shanshan and Rothhardt, Daniel and H{\"o}rmann, Ulrich and Amir, Yohai and Redinger, Alex and Kegelmann, Lukas and Zu, Fengshuo and Albrecht, Steve and Koch, Norbert and Kirchartz, Thomas and Saliba, Michael and Unold, Thomas and Neher, Dieter}, title = {The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells}, series = {Energy \& environmental science}, volume = {12}, journal = {Energy \& environmental science}, number = {9}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {1754-5692}, doi = {10.1039/c9ee02020a}, pages = {2778 -- 2788}, year = {2019}, abstract = {Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4\%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces.}, language = {en} } @article{ZuAmsalemEggeretal.2019, author = {Zu, Fengshuo and Amsalem, Patrick and Egger, David A. and Wang, Rongbin and Wolff, Christian Michael and Fang, Honghua and Loi, Maria Antonietta and Neher, Dieter and Kronik, Leeor and Duhm, Steffen and Koch, Norbert}, title = {Constructing the Electronic Structure of CH3NH3PbI3 and CH3NH3PbBr3 Perovskite Thin Films from Single-Crystal Band Structure Measurements}, series = {The journal of physical chemistry letters}, volume = {10}, journal = {The journal of physical chemistry letters}, number = {3}, publisher = {American Chemical Society}, address = {Washington}, issn = {1948-7185}, doi = {10.1021/acs.jpclett.8b03728}, pages = {601 -- 609}, year = {2019}, abstract = {Photovoltaic cells based on halide perovskites, possessing remarkably high power conversion efficiencies have been reported. To push the development of such devices further, a comprehensive and reliable understanding of their electronic properties is essential but presently not available. To provide a solid foundation for understanding the electronic properties of polycrystalline thin films, we employ single-crystal band structure data from angle-resolved photoemission measurements. For two prototypical perovskites (CH3NH3PbBr3 and CH3NH3PbI3), we reveal the band dispersion in two high-symmetry directions and identify the global valence band maxima. With these benchmark data, we construct "standard" photoemission spectra from polycrystalline thin film samples and resolve challenges discussed in the literature for determining the valence band onset with high reliability. Within the framework laid out here, the consistency of relating the energy level alignment in perovskite-based photovoltaic and optoelectronic devices with their functional parameters is substantially enhanced.}, language = {en} } @article{ZuWolffRalaiarisoaetal.2019, author = {Zu, Fengshuo and Wolff, Christian Michael and Ralaiarisoa, Maryline and Amsalem, Patrick and Neher, Dieter and Koch, Norbert}, title = {Unraveling the Electronic Properties of Lead Halide Perovskites with Surface Photovoltage in Photoemission Studies}, series = {ACS applied materials \& interfaces}, volume = {11}, journal = {ACS applied materials \& interfaces}, number = {24}, publisher = {American Chemical Society}, address = {Washington}, issn = {1944-8244}, doi = {10.1021/acsami.9b05293}, pages = {21578 -- 21583}, year = {2019}, abstract = {The tremendous success of metal-halide perovskites, especially in the field of photovoltaics, has triggered a substantial number of studies in understanding their optoelectronic properties. However, consensus regarding the electronic properties of these perovskites is lacking due to a huge scatter in the reported key parameters, such as work function (Φ) and valence band maximum (VBM) values. Here, we demonstrate that the surface photovoltage (SPV) is a key phenomenon occurring at the perovskite surfaces that feature a non-negligible density of surface states, which is more the rule than an exception for most materials under study. With ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe, we evidence that even minute UV photon fluxes (500 times lower than that used in typical UPS experiments) are sufficient to induce SPV and shift the perovskite Φ and VBM by several 100 meV compared to dark. By combining UV and visible light, we establish flat band conditions (i.e., compensate the surface-state-induced surface band bending) at the surface of four important perovskites, and find that all are p-type in the bulk, despite a pronounced n-type surface character in the dark. The present findings highlight that SPV effects must be considered in all surface studies to fully understand perovskites' photophysical properties.}, language = {en} } @article{CaprioglioZuWolffetal.2019, author = {Caprioglio, Pietro and Zu, Fengshuo and Wolff, Christian Michael and Prieto, Jose A. Marquez and Stolterfoht, Martin and Becker, Pascal and Koch, Norbert and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter}, title = {High open circuit voltages in pin-type perovskite solar cells through strontium addition}, series = {Sustainable Energy \& Fuels}, volume = {3}, journal = {Sustainable Energy \& Fuels}, number = {2}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {2398-4902}, doi = {10.1039/c8se00509e}, pages = {550 -- 563}, year = {2019}, abstract = {The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3\%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.}, language = {en} } @article{ZhangStolterfohtArminetal.2018, author = {Zhang, Shanshan and Stolterfoht, Martin and Armin, Ardalan and Lin, Qianqian and Zu, Fengshuo and Sobus, Jan and Jin, Hui and Koch, Norbert and Meredith, Paul and Burn, Paul L. and Neher, Dieter}, title = {Interface Engineering of Solution-Processed Hybrid Organohalide Perovskite Solar Cells}, series = {ACS applied materials \& interfaces}, volume = {10}, journal = {ACS applied materials \& interfaces}, number = {25}, publisher = {American Chemical Society}, address = {Washington}, issn = {1944-8244}, doi = {10.1021/acsami.8b02503}, pages = {21681 -- 21687}, year = {2018}, abstract = {Engineering the interface between the perovskite absorber and the charge-transporting layers has become an important method for improving the charge extraction and open-circuit voltage (V-OC) of hybrid perovskite solar cells. Conjugated polymers are particularly suited to form the hole-transporting layer, but their hydrophobicity renders it difficult to solution-process the perovskite absorber on top. Herein, oxygen plasma treatment is introduced as a simple means to change the surface energy and work function of hydrophobic polymer interlayers for use as p-contacts in perovskite solar cells. We find that upon oxygen plasma treatment, the hydrophobic surfaces of different prototypical p-type polymers became sufficiently hydrophilic to enable subsequent perovskite junction processing. In addition, the oxygen plasma treatment also increased the ionization potential of the polymer such that it became closer to the valance band energy of the perovskite. It was also found that the oxygen plasma treatment could increase the electrical conductivity of the p-type polymers, facilitating more efficient charge extraction. On the basis of this concept, inverted MAPbI(3) perovskite devices with different oxygen plasma-treated polymers such as P3HT, P3OT, polyTPD, or PTAA were fabricated with power conversion efficiencies of up to 19\%.}, language = {en} } @article{HoermannZeiskePiersimonietal.2018, author = {H{\"o}rmann, Ulrich and Zeiske, Stefan and Piersimoni, Fortunato and Hoffmann, Lukas and Schlesinger, Raphael and Koch, Norbert and Riedl, Thomas and Andrienko, Denis and Neher, Dieter}, title = {Stark effect of hybrid charge transfer states at planar ZnO/organic interfaces}, series = {Physical review : B, Condensed matter and materials physics}, volume = {98}, journal = {Physical review : B, Condensed matter and materials physics}, number = {15}, publisher = {American Physical Society}, address = {College Park}, issn = {2469-9950}, doi = {10.1103/PhysRevB.98.155312}, pages = {9}, year = {2018}, abstract = {We investigate the bias dependence of the hybrid charge transfer state emission at planar heterojunctions between the metal oxide acceptor ZnO and three donor molecules. The electroluminescence peak energy linearly increases with the applied bias, saturating at high fields. Variation of the organic layer thickness and deliberate change of the ZnO conductivity through controlled photodoping allow us to confirm that this bias-induced spectral shift relates to the internal electric field in the organic layer rather than the filling of states at the hybrid interface. We show that existing continuum models overestimate the hole delocalization and propose a simple electrostatic model in which the linear and quadratic Stark effects are explained by the electrostatic interaction of a strongly polarizable molecular cation with its mirror image.}, language = {en} } @article{WolffZuPaulkeetal.2017, author = {Wolff, Christian Michael and Zu, Fengshuo and Paulke, Andreas and Perdigon-Toro, Lorena and Koch, Norbert and Neher, Dieter}, title = {Reduced Interface-Mediated Recombination for High Open-Circuit Voltages in CH3NH3PbI3 Solar Cells}, series = {Advanced materials}, volume = {29}, journal = {Advanced materials}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {0935-9648}, doi = {10.1002/adma.201700159}, pages = {8}, year = {2017}, abstract = {Perovskite solar cells with all-organic transport layers exhibit efficiencies rivaling their counterparts that employ inorganic transport layers, while avoiding high-temperature processing. Herein, it is investigated how the choice of the fullerene derivative employed in the electron-transporting layer of inverted perovskite cells affects the open-circuit voltage (V-OC). It is shown that nonradiative recombination mediated by the electron-transporting layer is the limiting factor for the V-OC in the cells. By inserting an ultrathin layer of an insulating polymer between the active CH3NH3PbI3 perovskite and the fullerene, an external radiative efficiency of up to 0.3\%, a V-OC as high as 1.16 V, and a power conversion efficiency of 19.4\% are realized. The results show that the reduction of nonradiative recombination due to charge-blocking at the perovskite/organic interface is more important than proper level alignment in the search for ideal selective contacts toward high V-OC and efficiency.}, language = {en} } @article{SchubertFrischAllardetal.2017, author = {Schubert, Marcel and Frisch, Johannes and Allard, Sybille and Preis, Eduard and Scherf, Ullrich and Koch, Norbert and Neher, Dieter}, title = {Tuning side chain and main chain order in a prototypical donor-acceptor copolymer}, series = {Elementary Processes in Organic Photovoltaics}, volume = {272}, journal = {Elementary Processes in Organic Photovoltaics}, publisher = {Springer}, address = {Berlin}, isbn = {978-3-319-28338-8}, issn = {0065-3195}, doi = {10.1007/978-3-319-28338-8_10}, pages = {243 -- 265}, year = {2017}, abstract = {The recent development of donor-acceptor copolymers has led to an enormous improvement in the performance of organic solar cells and organic field-effect transistors. Here we describe the synthesis, detailed characterisation, and application of a series of structurally modified copolymers to investigate fundamental structure-property relationships in this class of conjugated polymers. The interplay between chemical structure and optoelectronic properties is investigated. These are further correlated to the charge transport and solar cell performance, which allows us to link their chemical structure to the observed physical properties.}, language = {en} } @article{LuDiPietroKoellnetal.2016, author = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter}, title = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends}, series = {Advanced electronic materials}, volume = {2}, journal = {Advanced electronic materials}, publisher = {Wiley-Blackwell}, address = {Hoboken}, issn = {2199-160X}, doi = {10.1002/aelm.201600267}, pages = {2344 -- 2351}, year = {2016}, abstract = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.}, language = {en} } @article{GhaniOpitzPingeletal.2015, author = {Ghani, Fatemeh and Opitz, Andreas and Pingel, Patrick and Heimel, Georg and Salzmann, Ingo and Frisch, Johannes and Neher, Dieter and Tsami, Argiri and Scherf, Ullrich and Koch, Norbert}, title = {Charge Transfer in and Conductivity of Molecularly Doped Thiophene-Based Copolymers}, series = {Journal of polymer science : B, Polymer physics}, volume = {53}, journal = {Journal of polymer science : B, Polymer physics}, number = {1}, publisher = {Wiley-Blackwell}, address = {Hoboken}, issn = {0887-6266}, doi = {10.1002/polb.23631}, pages = {58 -- 63}, year = {2015}, abstract = {The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.}, language = {en} } @article{PiersimoniSchlesingerBenduhnetal.2015, author = {Piersimoni, Fortunato and Schlesinger, Raphael and Benduhn, Johannes and Spoltore, Donato and Reiter, Sina and Lange, Ilja and Koch, Norbert and Vandewal, Koen and Neher, Dieter}, title = {Charge Transfer Absorption and Emission at ZnO/Organic Interfaces}, series = {The journal of physical chemistry letters}, volume = {6}, journal = {The journal of physical chemistry letters}, number = {3}, publisher = {American Chemical Society}, address = {Washington}, issn = {1948-7185}, doi = {10.1021/jz502657z}, pages = {500 -- 504}, year = {2015}, abstract = {We investigate hybrid charge transfer states (HCTS) at the planar interface between a-NPD and ZnO by spectrally resolved electroluminescence (EL) and external quantum efficiency (EQE) measurements. Radiative decay of HCTSs is proven by distinct emission peaks in the EL spectra of such bilayer devices in the NIR at energies well below the bulk a-NPD or ZnO emission. The EQE spectra display low energy contributions clearly red-shifted with respect to the a-NPD photocurrent and partially overlapping with the EL emission. Tuning of the energy gap between the ZnO conduction band and a-NPD HOMO level (E-int) was achieved by modifying the ZnO surface with self-assembled monolayers based on phosphonic acids. We find a linear dependence of the peak position of the NIR EL on E-int, which unambiguously attributes the origin of this emission to radiative recombination between an electron on the ZnO and a hole on a-NPD. In accordance with this interpretation, we find a strictly linear relation between the open-circuit voltage and the energy of the charge state for such hybrid organicinorganic interfaces.}, language = {en} } @article{LuKochNeher2015, author = {Lu, Guanghao and Koch, Norbert and Neher, Dieter}, title = {In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret}, series = {Applied physics letters}, volume = {107}, journal = {Applied physics letters}, number = {6}, publisher = {American Institute of Physics}, address = {Melville}, issn = {0003-6951}, doi = {10.1063/1.4928554}, pages = {5}, year = {2015}, abstract = {Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage V-t of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 degrees C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired V-t can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters. (C) 2015 AIP Publishing LLC.}, language = {en} } @article{LuBlakesleyHimmelbergeretal.2013, author = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter}, title = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors}, series = {Nature Communications}, volume = {4}, journal = {Nature Communications}, number = {1-2}, publisher = {Nature Publ. Group}, address = {London}, issn = {2041-1723}, doi = {10.1038/ncomms2587}, pages = {8}, year = {2013}, abstract = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.}, language = {en} }