@article{GhaniOpitzPingeletal.2015,
  author    = {Ghani, Fatemeh and Opitz, Andreas and Pingel, Patrick and Heimel, Georg and Salzmann, Ingo and Frisch, Johannes and Neher, Dieter and Tsami, Argiri and Scherf, Ullrich and Koch, Norbert},
  title     = {Charge Transfer in and Conductivity of Molecularly Doped Thiophene-Based Copolymers},
  series = {Journal of polymer science : B, Polymer physics},
  volume    = {53},
  journal   = {Journal of polymer science : B, Polymer physics},
  number    = {1},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {0887-6266},
  doi       = {10.1002/polb.23631},
  pages     = {58 -- 63},
  year      = {2015},
  abstract  = {The electrical conductivity of organic semiconductors can be enhanced by orders of magnitude via doping with strong molecular electron acceptors or donors. Ground-state integer charge transfer and charge-transfer complex formation between organic semiconductors and molecular dopants have been suggested as the microscopic mechanisms causing these profound changes in electrical materials properties. Here, we study charge-transfer interactions between the common molecular p-dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane and a systematic series of thiophene-based copolymers by a combination of spectroscopic techniques and electrical measurements. Subtle variations in chemical structure are seen to significantly impact the nature of the charge-transfer species and the efficiency of the doping process, underlining the need for a more detailed understanding of the microscopic doping mechanism in organic semiconductors to reliably guide targeted chemical design.},
  language  = {en}
}
@article{PiersimoniSchlesingerBenduhnetal.2015,
  author    = {Piersimoni, Fortunato and Schlesinger, Raphael and Benduhn, Johannes and Spoltore, Donato and Reiter, Sina and Lange, Ilja and Koch, Norbert and Vandewal, Koen and Neher, Dieter},
  title     = {Charge Transfer Absorption and Emission at ZnO/Organic Interfaces},
  series = {The journal of physical chemistry letters},
  volume    = {6},
  journal   = {The journal of physical chemistry letters},
  number    = {3},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1948-7185},
  doi       = {10.1021/jz502657z},
  pages     = {500 -- 504},
  year      = {2015},
  abstract  = {We investigate hybrid charge transfer states (HCTS) at the planar interface between a-NPD and ZnO by spectrally resolved electroluminescence (EL) and external quantum efficiency (EQE) measurements. Radiative decay of HCTSs is proven by distinct emission peaks in the EL spectra of such bilayer devices in the NIR at energies well below the bulk a-NPD or ZnO emission. The EQE spectra display low energy contributions clearly red-shifted with respect to the a-NPD photocurrent and partially overlapping with the EL emission. Tuning of the energy gap between the ZnO conduction band and a-NPD HOMO level (E-int) was achieved by modifying the ZnO surface with self-assembled monolayers based on phosphonic acids. We find a linear dependence of the peak position of the NIR EL on E-int, which unambiguously attributes the origin of this emission to radiative recombination between an electron on the ZnO and a hole on a-NPD. In accordance with this interpretation, we find a strictly linear relation between the open-circuit voltage and the energy of the charge state for such hybrid organicinorganic interfaces.},
  language  = {en}
}
@article{LuKochNeher2015,
  author    = {Lu, Guanghao and Koch, Norbert and Neher, Dieter},
  title     = {In-situ tuning threshold voltage of field-effect transistors based on blends of poly(3-hexylthiophene) with an insulator electret},
  series = {Applied physics letters},
  volume    = {107},
  journal   = {Applied physics letters},
  number    = {6},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.4928554},
  pages     = {5},
  year      = {2015},
  abstract  = {Blending the conjugated polymer poly(3-hexylthiophene) (P3HT) with the insulating electret polystyrene (PS), we show that the threshold voltage V-t of organic field-effect transistors (OFETs) can be easily and reversely tuned by applying a gate bias stress at 130 degrees C. It is proposed that this phenomenon is caused by thermally activated charge injection from P3HT into PS matrix, and that this charge is immobilized within the PS matrix after cooling down to room temperature. Therefore, room-temperature hysteresis-free FETs with desired V-t can be easily achieved. The approach is applied to reversely tune the OFET mode of operation from accumulation to depletion, and to build inverters. (C) 2015 AIP Publishing LLC.},
  language  = {en}
}