@article{CaprioglioStolterfohtWolffetal.2019,
  author    = {Caprioglio, Pietro and Stolterfoht, Martin and Wolff, Christian Michael and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {On the relation between the open-circuit voltage and quasi-fermi level splitting in efficient perovskite solar cells},
  series = {advanced energy materials},
  volume    = {9},
  journal   = {advanced energy materials},
  number    = {33},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {1614-6832},
  doi       = {10.1002/aenm.201901631},
  pages     = {10},
  year      = {2019},
  abstract  = {Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin-type PSCs with efficiencies above 20\%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-VOC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-VOC relation is of great importance.},
  language  = {en}
}
@misc{CaprioglioStolterfohtWolffetal.2019,
  author    = {Caprioglio, Pietro and Stolterfoht, Martin and Wolff, Christian Michael and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {On the relation between the open-circuit voltage and quasi-Fermi level splitting in efficient perovskite solar cells},
  series = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  journal   = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  number    = {774},
  issn      = {1866-8372},
  doi       = {10.25932/publishup-43759},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-437595},
  pages     = {10},
  year      = {2019},
  abstract  = {Today's perovskite solar cells (PSCs) are limited mainly by their open-circuit voltage (VOC) due to nonradiative recombination. Therefore, a comprehensive understanding of the relevant recombination pathways is needed. Here, intensity-dependent measurements of the quasi-Fermi level splitting (QFLS) and of the VOC on the very same devices, including pin-type PSCs with efficiencies above 20\%, are performed. It is found that the QFLS in the perovskite lies significantly below its radiative limit for all intensities but also that the VOC is generally lower than the QFLS, violating one main assumption of the Shockley-Queisser theory. This has far-reaching implications for the applicability of some well-established techniques, which use the VOC as a measure of the carrier densities in the absorber. By performing drift-diffusion simulations, the intensity dependence of the QFLS, the QFLS-VOC offset and the ideality factor are consistently explained by trap-assisted recombination and energetic misalignment at the interfaces. Additionally, it is found that the saturation of the VOC at high intensities is caused by insufficient contact selectivity while heating effects are of minor importance. It is concluded that the analysis of the VOC does not provide reliable conclusions of the recombination pathways and that the knowledge of the QFLS-VOC relation is of great importance.},
  language  = {en}
}
@article{CaprioglioZuWolffetal.2019,
  author    = {Caprioglio, Pietro and Zu, Fengshuo and Wolff, Christian Michael and Prieto, Jose A. Marquez and Stolterfoht, Martin and Becker, Pascal and Koch, Norbert and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter},
  title     = {High open circuit voltages in pin-type perovskite solar cells through strontium addition},
  series = {Sustainable Energy \& Fuels},
  volume    = {3},
  journal   = {Sustainable Energy \& Fuels},
  number    = {2},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {2398-4902},
  doi       = {10.1039/c8se00509e},
  pages     = {550 -- 563},
  year      = {2019},
  abstract  = {The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3\%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.},
  language  = {en}
}
@article{ColladoFregosoPuglieseWojciketal.2019,
  author    = {Collado-Fregoso, Elisa and Pugliese, Silvina N. and Wojcik, Mariusz and Benduhn, Johannes and Bar-Or, Eyal and Perdigon-Toro, Lorena and H{\"o}rmann, Ulrich and Spoltore, Donato and Vandewal, Koen and Hodgkiss, Justin M. and Neher, Dieter},
  title     = {Energy-gap law for photocurrent generation in fullerene-based organic solar cells},
  series = {Journal of the American Chemical Society},
  volume    = {141},
  journal   = {Journal of the American Chemical Society},
  number    = {6},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0002-7863},
  doi       = {10.1021/jacs.8b09820},
  pages     = {2329 -- 2341},
  year      = {2019},
  abstract  = {The involvement of charge-transfer (CT) states in the photogeneration and recombination of charge carriers has been an important focus of study within the organic photovoltaic community. In this work, we investigate the molecular factors determining the mechanism of photocurrent generation in low-donor-content organic solar cells, where the active layer is composed of vacuum-deposited C-60 and small amounts of organic donor molecules. We find a pronounced decline of all photovoltaic parameters with decreasing CT state energy. Using a combination of steady-state photocurrent measurements and time-delayed collection field experiments, we demonstrate that the power conversion efficiency, and more specifically, the fill factor of these devices, is mainly determined by the bias dependence of photocurrent generation. By combining these findings with the results from ultrafast transient absorption spectroscopy, we show that blends with small CT energies perform poorly because of an increased nonradiative CT state decay rate and that this decay obeys an energy-gap law. Our work challenges the common view that a large energy offset at the heterojunction and/or the presence of fullerene clusters guarantee efficient CT dissociation and rather indicates that charge generation benefits from high CT state energies through a slower decay to the ground state.},
  language  = {en}
}
@article{DeschlerNeherSchmidtMende2019,
  author    = {Deschler, Felix and Neher, Dieter and Schmidt-Mende, Lukas},
  title     = {Perovskite semiconductors for next generation optoelectronic applications},
  series = {APL Materials},
  volume    = {7},
  journal   = {APL Materials},
  number    = {8},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {2166-532X},
  doi       = {10.1063/1.5119744},
  pages     = {3},
  year      = {2019},
  language  = {en}
}
@article{HofmannZuefleShimizuetal.2019,
  author    = {Hofmann, Alexander J. L. and Z{\"u}fle, Simon and Shimizu, Kohei and Schmid, Markus and Wessels, Vivien and J{\"a}ger, Lars and Altazin, Stephane and Ikegami, Keitaro and Khan, Motiur Rahman and Neher, Dieter and Ishii, Hisao and Ruhstaller, Beat and Br{\"u}tting, Wolfgang},
  title     = {Dipolar Doping of Organic Semiconductors to Enhance Carrier Injection},
  series = {Physical review applied},
  volume    = {12},
  journal   = {Physical review applied},
  number    = {6},
  publisher = {American Physical Society},
  address   = {College Park},
  issn      = {2331-7019},
  doi       = {10.1103/PhysRevApplied.12.064052},
  pages     = {11},
  year      = {2019},
  abstract  = {If not oriented perfectly isotropically, the strong dipole moment of polar organic semiconductor materials such as tris-(8-hydroxyquinolate)aluminum (Alq3) will lead to the buildup of a giant surface potential (GSP) and thus to a macroscopic dielectric polarization of the organic film. Despite this having been a known fact for years, the implications of such high potentials within an organic layer stack have only been studied recently. In this work, the influence of the GSP on hole injection into organic layers is investigated. Therefore, we apply a concept called dipolar doping to devices consisting of the prototypical organic materials N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as nonpolar host and Alq3 as dipolar dopant with different mixing ratios to tune the GSP. The mixtures are investigated in single-layer monopolar devices as well as bilayer metal/insulator/semiconductor structures. Characterization is done electrically using current-voltage (I-V) characteristics, impedance spectroscopy, and charge extraction by linearly increasing voltage and time of flight, as well as with ultraviolet photoelectron spectroscopy. We find a maximum in device performance for moderate to low doping concentrations of the polar species in the host. The observed behavior can be described on the basis of the Schottky effect for image-force barrier lowering, if the changes in the interface dipole, the carrier mobility, and the GSP induced by dipolar doping are taken into account.},
  language  = {en}
}
@article{HosseiniRolandKurpiersetal.2019,
  author    = {Hosseini, Seyed Mehrdad and Roland, Steffen and Kurpiers, Jona and Chen, Zhiming and Zhang, Kai and Huang, Fei and Armin, Ardalan and Neher, Dieter and Shoaee, Safa},
  title     = {Impact of Bimolecular Recombination on the Fill Factor of Fullerene and Nonfullerene-Based Solar Cells},
  series = {The journal of physical chemistry : C, Nanomaterials and interfaces},
  volume    = {123},
  journal   = {The journal of physical chemistry : C, Nanomaterials and interfaces},
  number    = {11},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1932-7447},
  doi       = {10.1021/acs.jpcc.8b11669},
  pages     = {6823 -- 6830},
  year      = {2019},
  abstract  = {Power conversion efficiencies of donor/acceptor organic solar cells utilizing nonfullerene acceptors have now increased beyond the record of their fullerene-based counterparts. There remain many fundamental questions regarding nanomorphology, interfacial states, charge generation and extraction, and losses in these systems. Herein, we present a comparative study of bulk heterojunction solar cells composed of a recently introduced naphthothiadiazole-based polymer (NT812) as the electron donor and two different acceptor molecules, namely, [6,6]-phenyl-C71-butyric acid methyl ester (PCBM)[70] and 3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene (ITIC). A comparison between the photovoltaic performance of these two types of solar cells reveals that the open-circuit voltage (Voc) of the NT812:ITIC-based solar cell is larger, but the fill factor (FF) is lower than that of the NT812:PCBM[70] device. We find the key reason behind this reduced FF in the ITIC-based device to be faster nongeminate recombination relative to the NT812:PCBM[70] system.},
  language  = {en}
}
@article{HoermannZeiskeParketal.2019,
  author    = {H{\"o}rmann, Ulrich and Zeiske, Stefan and Park, Soohyung and Schultz, Thorsten and Kickhoefel, Sebastian and Scherf, Ullrich and Blumstengel, Sylke and Koch, Norbert and Neher, Dieter},
  title     = {Direct observation of state-filling at hybrid tin oxide/organic interfaces},
  series = {Applied physics letters},
  volume    = {114},
  journal   = {Applied physics letters},
  number    = {18},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0003-6951},
  doi       = {10.1063/1.5082704},
  pages     = {5},
  year      = {2019},
  abstract  = {Electroluminescence (EL) spectra of hybrid charge transfer states at metal oxide/organic type-II heterojunctions exhibit bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for either electric field-induced effects or the filling of trap states at the oxide surface have been put forward. Here, we combine the results of EL and photovoltaic measurements to eliminate the unavoidable effect of the series resistance of inorganic and organic components on the total voltage drop across the hybrid device. For SnOx combined with the conjugated polymer [ladder type poly-(para-phenylene)], we find a one-to-one correspondence between the blue-shift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data are resembled best by a model considering the combination of an exponential density of states with a doped semiconductor. Published under license by AIP Publishing.},
  language  = {en}
}
@article{KegelmannTockhornWolffetal.2019,
  author    = {Kegelmann, Lukas and Tockhorn, Philipp and Wolff, Christian Michael and M{\´a}rquez, Jos{\´e} A. and Caicedo D{\´a}vila, Sebasti{\´a}n and Korte, Lars and Unold, Thomas and Loevenich, Wilfried and Neher, Dieter and Rech, Bernd and Albrecht, Steve},
  title     = {Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells},
  series = {ACS applied materials \& interfaces},
  volume    = {11},
  journal   = {ACS applied materials \& interfaces},
  number    = {9},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1944-8244},
  doi       = {10.1021/acsami.9b01332},
  pages     = {9172 -- 9181},
  year      = {2019},
  abstract  = {Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22\%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7\% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.},
  language  = {en}
}
@article{KniepertPaulkePerdigonToroetal.2019,
  author    = {Kniepert, Juliane and Paulke, Andreas and Perdigon-Toro, Lorena and Kurpiers, Jona and Zhang, Huotian and Gao, Feng and Yuan, Jun and Zou, Yingping and Le Corre, Vincent M. and Koster, Lambert Jan Anton and Neher, Dieter},
  title     = {Reliability of charge carrier recombination data determined with charge extraction methods},
  series = {Journal of applied physics},
  volume    = {126},
  journal   = {Journal of applied physics},
  number    = {20},
  publisher = {American Institute of Physics},
  address   = {Melville},
  issn      = {0021-8979},
  doi       = {10.1063/1.5129037},
  pages     = {15},
  year      = {2019},
  abstract  = {Charge extraction methods are popular for measuring the charge carrier density in thin film organic solar cells and to draw conclusions about the order and coefficient of nongeminate charge recombination. However, results from such studies may be falsified by inhomogeneous steady state carrier profiles or surface recombination. Here, we present a detailed drift-diffusion study of two charge extraction methods, bias-assisted charge extraction (BACE) and time-delayed collection field (TDCF). Simulations are performed over a wide range of the relevant parameters. Our simulations reveal that both charge extraction methods provide reliable information about the recombination order and coefficient if the measurements are performed under appropriate conditions. However, results from BACE measurements may be easily affected by surface recombination, in particular for small active layer thicknesses and low illumination densities. TDCF, on the other hand, is more robust against surface recombination due to its transient nature but also because it allows for a homogeneous high carrier density to be inserted into the active layer. Therefore, TDCF is capable to provide meaningful information on the order and coefficient of recombination even if the model conditions are not exactly fulfilled. We demonstrate this for an only 100 nm thick layer of a highly efficient nonfullerene acceptor (NFA) blend, comprising the donor polymer PM6 and the NFA Y6. TDCF measurements were performed as a function of delay time for different laser fluences and bias conditions. The full set of data could be consistently fitted by a strict second order recombination process, with a bias- and fluence-independent bimolecular recombination coefficient k(2) = 1.7 x 10(-17)m(3) s(-1). BACE measurements performed on the very same layer yielded the identical result, despite the very different excitation conditions. This proves that recombination in this blend is mostly through processes in the bulk and that surface recombination is of minor importance despite the small active layer thickness. Published under license by AIP Publishing.},
  language  = {en}
}
@article{LeCorreStolterfohtPerdigonToroetal.2019,
  author    = {Le Corre, Vincent M. and Stolterfoht, Martin and Perdig{\´o}n-Toro, Lorena and Feuerstein, Markus and Wolff, Christian Michael and Gil-Escrig, Lidon and Bolink, Henk J. and Neher, Dieter and Koster, L. Jan Anton},
  title     = {Charge Transport Layers Limiting the Efficiency of Perovskite Solar Cells: How To Optimize Conductivity, Doping, and Thickness},
  series = {ACS Applied Energy Materials},
  volume    = {2},
  journal   = {ACS Applied Energy Materials},
  number    = {9},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {2574-0962},
  doi       = {10.1021/acsaem.9b00856},
  pages     = {6280 -- 6287},
  year      = {2019},
  abstract  = {Perovskite solar cells (PSCs) are one of the main research topics of the photovoltaic community; with efficiencies now reaching up to 24\%, PSCs are on the way to catching up with classical inorganic solar cells. However, PSCs have not yet reached their full potential. In fact, their efficiency is still limited by nonradiative recombination, mainly via trap-states and by losses due to the poor transport properties of the commonly used transport layers (TLs). Indeed, state-of-the-art TLs (especially if organic) suffer from rather low mobilities, typically within 10(-5) and 10(-2) cm(-2) V-1 s(-1), when compared to the high mobilities, 1-10 cm(-2) V-1 s(-1), measured for perovskites. This work presents a comprehensive analysis of the effect of the mobility, thickness, and doping density of the transport layers based on combined experimental and modeling results of two sets of devices made of a solution-processed high-performing triple-cation (PCE approximate to 20\%). The results are also cross-checked on vacuum-processed MAPbI(3) devices. From this analysis, general guidelines on how to optimize a TL are introduced and especially a new and simple formula to easily calculate the amount of doping necessary to counterbalance the low mobility of the TLs.},
  language  = {en}
}
@article{LiBenduhnQiaoetal.2019,
  author    = {Li, Tian-yi and Benduhn, Johannes and Qiao, Zhi and Liu, Yuan and Li, Yue and Shivhare, Rishi and Jaiser, Frank and Wang, Pei and Ma, Jie and Zeika, Olaf and Neher, Dieter and Mannsfeld, Stefan C. B. and Ma, Zaifei and Vandewal, Koen and Leo, Karl},
  title     = {Effect of H- and J-Aggregation on the Photophysical and Voltage Loss of Boron Dipyrromethene Small Molecules in Vacuum-Deposited Organic Solar Cells},
  series = {The journal of physical chemistry letters},
  volume    = {10},
  journal   = {The journal of physical chemistry letters},
  number    = {11},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1948-7185},
  doi       = {10.1021/acs.jpclett.9b01222},
  pages     = {2684 -- 2691},
  year      = {2019},
  abstract  = {An understanding of the factors limiting the open-circuit voltage (V-oc) and related photon energy loss mechanisms is critical to increase the power conversion efficiency (PCE) of small-molecule organic solar cells (OSCs), especially those with near-infrared (NIR) absorbers. In this work, two NIR boron dipyrromethene (BODIPY) molecules are characterized for application in planar (PHJ) and bulk (BHJ) heterojunction OSCs. When two H atoms are substituted by F atoms on the peripheral phenyl rings of the molecules, the molecular aggregation type in the thin film changes from the H-type to J-type. For PHJ devices, the nonradiative voltage loss of 0.35 V in the J-aggregated BODIPY is lower than that of 0.49 V in the H-aggregated device. In BHJ devices with a nonradiative voltage loss of 0.35 V, a PCE of 5.5\% is achieved with an external quantum efficiency (EQE) maximum of 68\% at 700 nm.},
  language  = {en}
}
@article{NikolisMischokSiegmundetal.2019,
  author    = {Nikolis, Vasileios C. and Mischok, Andreas and Siegmund, Bernhard and Kublitski, Jonas and Jia, Xiangkun and Benduhn, Johannes and H{\"o}rmann, Ulrich and Neher, Dieter and Gather, Malte C. and Spoltore, Donato and Vandewal, Koen},
  title     = {Strong light-matter coupling for reduced photon energy losses in organic photovoltaics},
  series = {Nature Communications},
  volume    = {10},
  journal   = {Nature Communications},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/s41467-019-11717-5},
  pages     = {8},
  year      = {2019},
  abstract  = {Strong light-matter coupling can re-arrange the exciton energies in organic semiconductors. Here, we exploit strong coupling by embedding a fullerene-free organic solar cell (OSC) photo-active layer into an optical microcavity, leading to the formation of polariton peaks and a red-shift of the optical gap. At the same time, the open-circuit voltage of the device remains unaffected. This leads to reduced photon energy losses for the low-energy polaritons and a steepening of the absorption edge. While strong coupling reduces the optical gap, the energy of the charge-transfer state is not affected for large driving force donor-acceptor systems. Interestingly, this implies that strong coupling can be exploited in OSCs to reduce the driving force for electron transfer, without chemical or microstructural modifications of the photoactive layer. Our work demonstrates that the processes determining voltage losses in OSCs can now be tuned, and reduced to unprecedented values, simply by manipulating the device architecture.},
  language  = {en}
}
@misc{PisoniStolterfohtLockingeretal.2019,
  author    = {Pisoni, Stefano and Stolterfoht, Martin and Lockinger, Johannes and Moser, Thierry and Jiang, Yan and Caprioglio, Pietro and Neher, Dieter and Buecheler, Stephan and Tiwari, Ayodhya N.},
  title     = {On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells},
  series = {Postprints der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe},
  journal   = {Postprints der Universit{\"a}t Potsdam : Mathematisch-Naturwissenschaftliche Reihe},
  number    = {1110},
  issn      = {1866-8372},
  doi       = {10.25932/publishup-45961},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-459617},
  pages     = {12},
  year      = {2019},
  abstract  = {The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C-60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from similar to 1.23 eV for the bare absorber, just similar to 90 meV below the radiative limit, to similar to 1.10 eV when C-60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of similar to 30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure. [GRAPHICS] .},
  language  = {en}
}
@article{PisoniStolterfohtLockingeretal.2019,
  author    = {Pisoni, Stefano and Stolterfoht, Martin and Lockinger, Johannes and Moser, Thierry and Jiang, Yan and Caprioglio, Pietro and Neher, Dieter and Buecheler, Stephan and Tiwari, Ayodhya N.},
  title     = {On the origin of open-circuit voltage losses in flexible n-i-p perovskite solar cells},
  series = {Science and technology of advanced materials : STAM},
  volume    = {20},
  journal   = {Science and technology of advanced materials : STAM},
  publisher = {Taylor \& Francis},
  address   = {Abingdon},
  issn      = {1468-6996},
  doi       = {10.1080/14686996.2019.1633952},
  pages     = {786 -- 795},
  year      = {2019},
  abstract  = {The possibility to manufacture perovskite solar cells (PSCs) at low temperatures paves the way to flexible and lightweight photovoltaic (PV) devices manufactured via high-throughput roll-to-roll processes. In order to achieve higher power conversion efficiencies, it is necessary to approach the radiative limit via suppression of non-radiative recombination losses. Herein, we performed a systematic voltage loss analysis for a typical low-temperature processed, flexible PSC in n-i-p configuration using vacuum deposited C-60 as electron transport layer (ETL) and two-step hybrid vacuum-solution deposition for CH3NH3PbI3 perovskite absorber. We identified the ETL/absorber interface as a bottleneck in relation to non-radiative recombination losses, the quasi-Fermi level splitting (QFLS) decreases from similar to 1.23 eV for the bare absorber, just similar to 90 meV below the radiative limit, to similar to 1.10 eV when C-60 is used as ETL. To effectively mitigate these voltage losses, we investigated different interfacial modifications via vacuum deposited interlayers (BCP, B4PyMPM, 3TPYMB, and LiF). An improvement in QFLS of similar to 30-40 meV is observed after interlayer deposition and confirmed by comparable improvements in the open-circuit voltage after implementation of these interfacial modifications in flexible PSCs. Further investigations on absorber/hole transport layer (HTL) interface point out the detrimental role of dopants in Spiro-OMeTAD film (widely employed HTL in the community) as recombination centers upon oxidation and light exposure. [GRAPHICS] .},
  language  = {en}
}
@article{RolandKniepertLoveetal.2019,
  author    = {Roland, Steffen and Kniepert, Juliane and Love, John A. and Negi, Vikas and Liu, Feilong and Bobbert, Peter and Melianas, Armantas and Kemerink, Martijn and Hofacker, Andreas and Neher, Dieter},
  title     = {Equilibrated Charge Carrier Populations Govern Steady-State Nongeminate Recombination in Disordered Organic Solar Cells},
  series = {The journal of physical chemistry letters},
  volume    = {10},
  journal   = {The journal of physical chemistry letters},
  number    = {6},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {1948-7185},
  doi       = {10.1021/acs.jpclett.9b00516},
  pages     = {1374 -- 1381},
  year      = {2019},
  abstract  = {We employed bias-assisted charge extraction techniques to investigate the transient and steady-state recombination of photogenerated charge carriers in complete devices of a disordered polymer-fullerene blend. Charge recombination is shown to be dispersive, with a significant slowdown of the recombination rate over time, consistent with the results from kinetic Monte Carlo simulations. Surprisingly, our experiments reveal little to no contributions from early time recombination of nonequilibrated charge carriers to the steady-state recombination properties. We conclude that energetic relaxation of photogenerated carriers outpaces any significant nongeminate recombination under application-relevant illumination conditions. With equilibrated charges dominating the steady-state recombination, quasi-equilibrium concepts appear suited for describing the open-circuit voltage of organic solar cells despite pronounced energetic disorder.},
  language  = {en}
}
@article{SchwarzeSchellhammerOrtsteinetal.2019,
  author    = {Schwarze, Martin and Schellhammer, Karl Sebastian and Ortstein, Katrin and Benduhn, Johannes and Gaul, Christopher and Hinderhofer, Alexander and Perdigon-Toro, Lorena and Scholz, Reinhard and Kublitski, Jonas and Roland, Steffen and Lau, Matthias and Poelking, Carl and Andrienko, Denis and Cuniberti, Gianaurelio and Schreiber, Frank and Neher, Dieter and Vandewal, Koen and Ortmann, Frank and Leo, Karl},
  title     = {Impact of molecular quadrupole moments on the energy levels at organic heterojunctions},
  series = {Nature Communications},
  volume    = {10},
  journal   = {Nature Communications},
  publisher = {Nature Publ. Group},
  address   = {London},
  issn      = {2041-1723},
  doi       = {10.1038/s41467-019-10435-2},
  pages     = {9},
  year      = {2019},
  abstract  = {The functionality of organic semiconductor devices crucially depends on molecular energies, namely the ionisation energy and the electron affinity. Ionisation energy and electron affinity values of thin films are, however, sensitive to film morphology and composition, making their prediction challenging. In a combined experimental and simulation study on zinc-phthalocyanine and its fluorinated derivatives, we show that changes in ionisation energy as a function of molecular orientation in neat films or mixing ratio in blends are proportional to the molecular quadrupole component along the p-p-stacking direction. We apply these findings to organic solar cells and demonstrate how the electrostatic interactions can be tuned to optimise the energy of the charge-transfer state at the donor-acceptor interface and the dissociation barrier for free charge carrier generation. The confirmation of the correlation between interfacial energies and quadrupole moments for other materials indicates its relevance for small molecules and polymers.},
  language  = {en}
}
@article{ShoaeeArminStolterfohtetal.2019,
  author    = {Shoaee, Safa and Armin, Ardalan and Stolterfoht, Martin and Hosseini, Seyed Mehrdad and Kurpiers, Jona and Neher, Dieter},
  title     = {Decoding Charge Recombination through Charge Generation in Organic Solar Cells},
  series = {Solar RRL},
  volume    = {3},
  journal   = {Solar RRL},
  number    = {11},
  publisher = {Wiley-VCH},
  address   = {Weinheim},
  issn      = {2367-198X},
  doi       = {10.1002/solr.201900184},
  pages     = {8},
  year      = {2019},
  abstract  = {The in-depth understanding of charge carrier photogeneration and recombination mechanisms in organic solar cells is still an ongoing effort. In donor:acceptor (bulk) heterojunction organic solar cells, charge photogeneration and recombination are inter-related via the kinetics of charge transfer states-being singlet or triplet states. Although high-charge-photogeneration quantum yields are achieved in many donor:acceptor systems, only very few systems show significantly reduced bimolecular recombination relative to the rate of free carrier encounters, in low-mobility systems. This is a serious limitation for the industrialization of organic solar cells, in particular when aiming at thick active layers. Herein, a meta-analysis of the device performance of numerous bulk heterojunction organic solar cells is presented for which field-dependent photogeneration, charge carrier mobility, and fill factor are determined. Herein, a "spin-related factor" that is dependent on the ratio of back electron transfer of the triplet charge transfer (CT) states to the decay rate of the singlet CT states is introduced. It is shown that this factor links the recombination reduction factor to charge-generation efficiency. As a consequence, it is only in the systems with very efficient charge generation and very fast CT dissociation that free carrier recombination is strongly suppressed, regardless of the spin-related factor.},
  language  = {en}
}
@misc{ShoaeeArminStolterfohtetal.2019,
  author    = {Shoaee, Safa and Armin, Ardalan and Stolterfoht, Martin and Hosseini, Seyed Mehrdad and Kurpiers, Jona and Neher, Dieter},
  title     = {Decoding charge recombination through charge generation in organic solar cells},
  series = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  journal   = {Postprints der Universit{\"a}t Potsdam Mathematisch-Naturwissenschaftliche Reihe},
  number    = {773},
  issn      = {1866-8372},
  doi       = {10.25932/publishup-43751},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-437512},
  pages     = {8},
  year      = {2019},
  abstract  = {The in-depth understanding of charge carrier photogeneration and recombination mechanisms in organic solar cells is still an ongoing effort. In donor:acceptor (bulk) heterojunction organic solar cells, charge photogeneration and recombination are inter-related via the kinetics of charge transfer states—being singlet or triplet states. Although high-charge-photogeneration quantum yields are achieved in many donor:acceptor systems, only very few systems show significantly reduced bimolecular recombination relative to the rate of free carrier encounters, in low-mobility systems. This is a serious limitation for the industrialization of organic solar cells, in particular when aiming at thick active layers. Herein, a meta-analysis of the device performance of numerous bulk heterojunction organic solar cells is presented for which field-dependent photogeneration, charge carrier mobility, and fill factor are determined. Herein, a "spin-related factor" that is dependent on the ratio of back electron transfer of the triplet charge transfer (CT) states to the decay rate of the singlet CT states is introduced. It is shown that this factor links the recombination reduction factor to charge-generation efficiency. As a consequence, it is only in the systems with very efficient charge generation and very fast CT dissociation that free carrier recombination is strongly suppressed, regardless of the spin-related factor.},
  language  = {en}
}
@article{StolterfohtCaprioglioWolffetal.2019,
  author    = {Stolterfoht, Martin and Caprioglio, Pietro and Wolff, Christian Michael and Marquez, Jose A. and Nordmann, Joleik and Zhang, Shanshan and Rothhardt, Daniel and H{\"o}rmann, Ulrich and Amir, Yohai and Redinger, Alex and Kegelmann, Lukas and Zu, Fengshuo and Albrecht, Steve and Koch, Norbert and Kirchartz, Thomas and Saliba, Michael and Unold, Thomas and Neher, Dieter},
  title     = {The impact of energy alignment and interfacial recombination on the internal and external open-circuit voltage of perovskite solar cells},
  series = {Energy \& environmental science},
  volume    = {12},
  journal   = {Energy \& environmental science},
  number    = {9},
  publisher = {Royal Society of Chemistry},
  address   = {Cambridge},
  issn      = {1754-5692},
  doi       = {10.1039/c9ee02020a},
  pages     = {2778 -- 2788},
  year      = {2019},
  abstract  = {Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V-OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the photoluminescence yield of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination currents in pin- and nip-type cells including high efficiency devices (21.4\%). Our study comprises a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V-OC by inducing an additional non-radiative recombination current that is in most cases substantially larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V-OC of the device. Importantly, the V-OC equals the internal quasi-Fermi level splitting (QFLS) in the absorber layer only in high efficiency cells, while in poor performing devices, the V-OC is substantially lower than the QFLS. Using ultraviolet photoelectron spectroscopy and differential charging capacitance experiments we show that this is due to an energy level mis-alignment at the p-interface. The findings are corroborated by rigorous device simulations which outline important considerations to maximize the V-OC. This work highlights that the challenge to suppress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in proper energy level alignment and in suppression of defect recombination at the interfaces.},
  language  = {en}
}