@article{BalderasValadezSchuermannPacholski2019, author = {Balderas-Valadez, Ruth Fabiola and Sch{\"u}rmann, Robin Mathis and Pacholski, Claudia}, title = {One Spot-Two Sensors: Porous Silicon Interferometers in Combination With Gold Nanostructures Showing Localized Surface Plasmon Resonance}, series = {Frontiers in chemistry}, volume = {7}, journal = {Frontiers in chemistry}, publisher = {Frontiers Research Foundation}, address = {Lausanne}, issn = {2296-2646}, doi = {10.3389/fchem.2019.00593}, pages = {12}, year = {2019}, abstract = {Sensors composed of a porous silicon monolayer covered with a film of nanostructured gold layer, which provide two optical signal transduction methods, are fabricated and thoroughly characterized concerning their sensing performance. For this purpose, silicon substrates were electrochemically etched in order to obtain porous silicon monolayers, which were subsequently immersed in gold salt solution facilitating the formation of a porous gold nanoparticle layer on top of the porous silicon. The deposition process was monitored by reflectance spectroscopy, and the appearance of a dip in the interference pattern of the porous silicon layer was observed. This dip can be assigned to the absorption of light by the deposited gold nanostructures leading to localized surface plasmon resonance. The bulk sensitivity of these sensors was determined by recording reflectance spectra in media having different refractive indices and compared to sensors exclusively based on porous silicon or gold nanostructures. A thorough analysis of resulting shifts of the different optical signals in the reflectance spectra on the wavelength scale indicated that the optical response of the porous silicon sensor is not influenced by the presence of a gold nanostructure on top. Moreover, the adsorption of thiol-terminated polystyrene to the sensor surface was solely detected by changes in the position of the dip in the reflectance spectrum, which is assigned to localized surface plasmon resonance in the gold nanostructures. The interference pattern resulting from the porous silicon layer is not shifted to longer wavelengths by the adsorption indicating the independence of the optical response of the two nanostructures, namely porous silicon and nanostructured gold layer, to refractive index changes and pointing to the successful realization of two sensors in one spot.}, language = {en} } @article{BaldSchuermannEbeletal.2019, author = {Bald, Ilko and Sch{\"u}rmann, Robin Mathis and Ebel, Kenny and Nicolas, Christophe and Milosavljevic, Aleksandar R.}, title = {Role of valence band states and plasmonic enhancement in electron-transfer-induced transformation of nitrothiophenol}, series = {The Journal of Physical Chemistry Letters}, volume = {10}, journal = {The Journal of Physical Chemistry Letters}, publisher = {American Chemical Society}, address = {Washington}, issn = {1948-7185}, doi = {10.1021/acs.jpclett.9b00848}, pages = {3153 -- 3158}, year = {2019}, abstract = {Hot-electron-induced reactions are more and more recognized as a critical and ubiquitous reaction in heterogeneous catalysis. However, the kinetics of these reactions is still poorly understood, which is also due to the complexity of plasmonic nanostructures. We determined the reaction rates of the hot-electron-mediated reaction of 4-nitrothiophenol (NTP) on gold nanoparticles (AuNPs) using fractal kinetics as a function of the laser wavelength and compared them with the plasmonic enhancement of the system. The reaction rates can be only partially explained by the plasmonic response of the NPs. Hence, synchrotron X-ray photoelectron spectroscopy (XPS) measurements of isolated NTP-capped AuNP clusters have been performed for the first time. In this way, it was possible to determine the work function and the accessible valence band states of the NP systems. The results show that besides the plasmonic enhancement, the reaction rates are strongly influenced by the local density of the available electronic states of the system.}, language = {en} } @article{VogelEbelSchuermannetal.2019, author = {Vogel, Stefanie and Ebel, Kenny and Sch{\"u}rmann, Robin Mathis and Heck, Christian and Meiling, Till and Milosavljevic, Aleksandar R. and Giuliani, Alexandre and Bald, Ilko}, title = {Vacuum-UV and Low-Energy Electron-Induced DNA Strand Breaks}, series = {ChemPhysChem : a European journal of chemical physics and physical chemistry}, volume = {20}, journal = {ChemPhysChem : a European journal of chemical physics and physical chemistry}, number = {6}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1439-4235}, doi = {10.1002/cphc.201801152}, pages = {823 -- 830}, year = {2019}, abstract = {DNA is effectively damaged by radiation, which can on the one hand lead to cancer and is on the other hand directly exploited in the treatment of tumor tissue. DNA strand breaks are already induced by photons having an energy below the ionization energy of DNA. At high photon energies, most of the DNA strand breaks are induced by low-energy secondary electrons. In the present study we quantified photon and electron induced DNA strand breaks in four different 12mer oligonucleotides. They are irradiated directly with 8.44 eV vacuum ultraviolet (VUV) photons and 8.8 eV low energy electrons (LEE). By using Si instead of VUV transparent CaF2 as a substrate the VUV exposure leads to an additional release of LEEs, which have a maximum energy of 3.6 eV and can significantly enhance strand break cross sections. Atomic force microscopy is used to visualize strand breaks on DNA origami platforms and to determine absolute values for the strand break cross sections. Upon irradiation with 8.44 eV photons all the investigated sequences show very similar strand break cross sections in the range of 1.7-2.3x10(-16) cm(2). The strand break cross sections for LEE irradiation at 8.8 eV are one to two orders of magnitude larger than the ones for VUV photons, and a slight sequence dependence is observed. The sequence dependence is even more pronounced for LEEs with energies <3.6 eV. The present results help to assess DNA damage by photons and electrons close to the ionization threshold.}, language = {en} } @article{VogelEbelHecketal.2019, author = {Vogel, Stefanie and Ebel, Kenny and Heck, Christian and Sch{\"u}rmann, Robin Mathis and Milosavljevic, Aleksandar R. and Giuliani, Alexandre and Bald, Ilko}, title = {Vacuum-UV induced DNA strand breaks}, series = {Physical chemistry, chemical physics : a journal of European Chemical Societies}, volume = {21}, journal = {Physical chemistry, chemical physics : a journal of European Chemical Societies}, number = {4}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {1463-9076}, doi = {10.1039/c8cp06813e}, pages = {1972 -- 1979}, year = {2019}, abstract = {Radiation therapy is a basic part of cancer treatment. To increase the DNA damage in carcinogenic cells and preserve healthy tissue at the same time, radiosensitizing molecules such as halogenated nucleobase analogs can be incorporated into the DNA during the cell reproduction cycle. In the present study 8.44 eV photon irradiation induced single strand breaks (SSB) in DNA sequences modified with the radiosensitizer 5-bromouracil (U-5Br) and 8-bromoadenine ((8Br)A) are investigated. U-5Br was incorporated in the 13mer oligonucleotide flanked by different nucleobases. It was demonstrated that the highest SSB cross sections were reached, when cytosine and thymine were adjacent to U-5Br, whereas guanine as a neighboring nucleobase decreases the activity of U-5Br indicating that competing reaction mechanisms are active. This was further investigated with respect to the distance of guanine to U-5Br separated by an increasing number of adenine nucleotides. It was observed that the SSB cross sections were decreasing with an increasing number of adenine spacers between guanine and U-5Br until the SSB cross sections almost reached the level of a non-modified DNA sequence, which demonstrates the high sequence dependence of the sensitizing effect of U-5Br. (8Br)A was incorporated in a 13mer oligonucleotide as well and the strand breaks were quantified upon 8.44 eV photon irradiation in direct comparison to a non-modified DNA sequence of the same composition. No clear enhancement of the SSB yield of the modified in comparison to the non-modified DNA sequence could be observed. Additionally, secondary electrons with a maximum energy of 3.6 eV were generated when using Si as a substrate giving rise to further DNA damage. A clear enhancement in the SSB yield can be ascertained, but to the same degree for both the non-modified DNA sequence and the DNA sequence modified with (8Br)A.}, language = {en} }