@article{BrumaHamciucSavaetal.1996,
  author    = {Bruma, Maria and Hamciuc, Corneliu and Sava, Ion and Hamciuc, Elena and Mercer, Frank W. and Fritzsche, P. and Schulz, Burkhard},
  title     = {High temperature polyamides containing pendant imide groups},
  year      = {1996},
  language  = {en}
}
@article{BrumaHamciucHamciucetal.1996,
  author    = {Bruma, Maria and Hamciuc, Corneliu and Hamciuc, Elena and Mercer, Frank W. and Belomoina, Nataliya and Schulz, Burkhard},
  title     = {Heterocyclic polyamides containing hexafluoroisopropylidene groups},
  year      = {1996},
  language  = {en}
}
@article{BrumaHamciucHamciucetal.1997,
  author    = {Bruma, Maria and Hamciuc, Corneliu and Hamciuc, Elena and Mercer, Frank W. and Belomoina, Nataliya and Schulz, Burkhard},
  title     = {Heterocyclic polyamides containing hexafluoroisopropylidene groups},
  year      = {1997},
  abstract  = {New heterocyclic polyamides have been synthesized by solution polycondensation of aromatic diamines containing phenyl- quinoxaline units with diacid chlorides having both imide and hexafluoroisopropylidene (6F) groups. These polymers are soluble in polar aprotic solvents, such as N-methylpyrrolidone (NMP) or N,N-dimethylformamide (DMF), and can be cast into flexible thin films from solutions. They show high thermooxidative stability with decomposition temperatures above 400°C and glass transition temperatures in the range of 225 - 300°C. The polymer films exhibit good chemical resistance towards deluted acids and good electrical insulating properties with dielectric constants in the range of 3.2 - 3.7.},
  language  = {en}
}
@article{HamciucHamciucBrumaetal.1997,
  author    = {Hamciuc, Elena and Hamciuc, Corneliu and Bruma, Maria and Stoleriu, Andre and Schulz, Burkhard},
  title     = {Poly(hydrazide-ester)s and poly(1,3,4-oxadiazole-ester)s containing pendent phenoxy groups},
  year      = {1997},
  abstract  = {A series of new arornatic poly(hydrazide-ester)s has been synthesized by solution polycondensation of two diacid dichlorides containing preformed ester groups with phenoxyterephthaloyl dihydrazide or with a mixture of phenoxyterephthaloyl dihydrazide with terephthaloyl- or isophthaloyl dihydrazide in N-methyl-2-pyrrolidinone. The thermal cyclization of the poly(hydrazide-ester)s gave the corresponding poly(1,3,4-oxadiazole-ester)s containing pendent phenoxy groups. The polymers were characterized by viscometry, solubility measurements, IR spectroscopy, differential scanning calorimetry and thermogravimetric analysis.},
  language  = {en}
}
@article{BrumaSchulzKoepnicketal.1998,
  author    = {Bruma, Maria and Schulz, Burkhard and K{\"o}pnick, Thomas and Stiller, Burkhard and Hamciuc, Elena and Mercer, Frank W. and Cassidy, Peter},
  title     = {Aromatic polyamides with hexafluoroisopropylidene groups and study of the thin},
  year      = {1998},
  language  = {en}
}
@article{BrumaHamciucSchulzetal.1999,
  author    = {Bruma, Maria and Hamciuc, Elena and Schulz, Burkhard and K{\"o}pnick, Thomas and Stiller, Burkhard and Mercer, Frank W.},
  title     = {Synthesis of fluorinated poly(phenylquinoxaline-amide)s and study of thin films made therefrom},
  year      = {1999},
  abstract  = {A series of five fluorinated poly(phenylquinoxaline-amide)s were synthesized by a polycondensation reaction of a diacid chloride containing the hexafluoroisopropylidene (6F) group, namely 2,2-bis(p-chlorocarbonylphenyl)- hexafluoropropane, with various aromatic diamines incorporating two phenyl-substituted quinoxaline rings. These polymers were easily soluble in polar aprotic solvents such as N-methylpyrrolione (NMP), dimethylformamide (DMF), and tetrahydrofurane (THF), and showed a high thermal stability with decomposition temperatures above 400 °C and glass transition temperatures in the range of 260-290 Tg. Polymer solutions in NMP were processed into free-standing films that showed low dielectric constant values, in the range of 3.4-3.9, and good mechanical properties, with tensile strength in the range of 40-80 MPa and elongation to break in the range of 22-55\%. Very thin films, in the range of tens of nanometer, which were deposited onto silicon wafers exhibited very smooth surfaces, free of pinholes when studied by atomic force microscopy (AFM).},
  language  = {en}
}