@article{GieblerSchulzReicheetal.1999,
  author    = {Giebler, Rainer and Schulz, Burkhard and Reiche, J{\"u}rgen and Brehmer, Ludwig and W{\"u}hn, Mario and W{\"o}ll, Christoph and Smith, Andrew Phillip and Urquhart, Steven G. and Ade, Harald W. and Unger, Wolfgang E. S.},
  title     = {Near-edge x-ray absorption fine structure spectroscopy on ordered films of an amphiphilic derivate of 2,5- Diphenyl-1,3,4-oxadiazole},
  year      = {1999},
  abstract  = {The surfaces of ordered films formed from an amphiphilic derivative of 2,5-diphenyl-1,3,4-oxadiazole by the Langmuir-Blodgett (LB) technique and organic molecular beam deposition (OMBD) were investigated by the use of near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. For the assignment of the spectral features of the C, N, and O K- edge absorption spectra, fingerprint spectra of poly(p-phenylene terephthalamide)(Kevlar), poly(ethylene terephthalate), poly(p-phenylene-1,3,4-oxadiazole), and 2,5-di- (pentadecyl)-1,3,4-oxadiazole, which contain related chemical moieties, were recorded. Ab initio molecular orbital calculations, performed with explicit treatment of the core hole, are used to support the spectral interpretations. Angle-resolved NEXAFS spectroscopy at the C, N, and O K-edges suggests a preferentially upright orientation of the oxadiazole derivative in the outermost layer of the films. X-ray specular reflectivity data and molecular modeling results suggest a similar interpretation.},
  language  = {en}
}
@article{KowarikGerlachLeitenbergeretal.2007,
  author    = {Kowarik, Stefan and Gerlach, Andreas and Leitenberger, Wolfram and Hu J, Witte and W{\"o}ll, Christoph and Schreiber, Frank},
  title     = {Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films},
  issn      = {0040-6090},
  doi       = {10.1016/j.tsf.2006.12.020},
  year      = {2007},
  abstract  = {We use energy-dispersive X-ray reflectivity and grazing incidence diffraction (GID) to follow the growth of the crystalline organic semiconductor pentacene on silicon oxide in-situ and in real-time. The technique allows for monitoring Bragg reflections and measuring X-ray growth oscillations with a time resolution of 1 min in a wide q-range in reciprocal space extending over 0.25-0.80 angstrom(-1), i.e. sampling a large number of Fourier components simultaneously. A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited. (c) 2006 Elsevier B.V. All rights reserved.},
  language  = {en}
}