@article{ScharsichLohwasserSommeretal.2012,
  author    = {Scharsich, Christina and Lohwasser, Ruth H. and Sommer, Michael and Asawapirom, Udom and Scherf, Ullrich and Thelakkat, Mukundan and Neher, Dieter and Koehler, Anna},
  title     = {Control of aggregate formation in poly(3-hexylthiophene) by solvent, molecular weight, and synthetic method},
  series = {Journal of polymer science : B, Polymer physics},
  volume    = {50},
  journal   = {Journal of polymer science : B, Polymer physics},
  number    = {6},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {0887-6266},
  doi       = {10.1002/polb.23022},
  pages     = {442 -- 453},
  year      = {2012},
  abstract  = {Aggregate formation in poly(3-hexylthiophene) depends on molecular weight, solvent, and synthetic method. The interplay of these parameters thus largely controls device performance. In order to obtain a quantitative understanding on how these factors control the resulting electronic properties of P3HT, we measured absorption in solution and in thin films as well as the resulting field effect mobility in transistors. By a detailed analysis of the absorption spectra, we deduce the fraction of aggregates formed, the excitonic coupling within the aggregates, and the conjugation length within the aggregates, all as a function of solvent quality for molecular weights from 5 to 19 kDa. From this, we infer in which structure the aggregated chains pack. Although the 5 kDa samples form straight chains, the 11 and 19 kDa chains are kinked or folded, with conjugation lengths that increase as the solvent quality reduces. There is a maximum fraction of aggregated chains (about 55 +/- 5\%) that can be obtained, even for poor solvent quality. We show that inducing aggregation in solution leads to control of aggregate properties in thin films. As expected, the field-effect mobility correlates with the propensity to aggregation. Correspondingly, we find that a well-defined synthetic approach, tailored to give a narrow molecular weight distribution, is needed to obtain high field effect mobilities of up to 0.01 cm2/Vs for low molecular weight samples (=11 kDa), while the influence of synthetic method is negligible for samples of higher molecular weight, if low molecular weight fractions are removed by extraction.},
  language  = {en}
}
@article{AlSa'diJaiserBagnichetal.2012,
  author    = {Al-Sa'di, Mahmoud and Jaiser, Frank and Bagnich, Sergey A. and Unger, Thomas and Blakesley, James C. and Wilke, Andreas and Neher, Dieter},
  title     = {Electrical and optical simulations of a polymer-based phosphorescent organic light-emitting diode with high efficiency},
  series = {Journal of polymer science : B, Polymer physics},
  volume    = {50},
  journal   = {Journal of polymer science : B, Polymer physics},
  number    = {22},
  publisher = {Wiley-Blackwell},
  address   = {Hoboken},
  issn      = {0887-6266},
  doi       = {10.1002/polb.23158},
  pages     = {1567 -- 1576},
  year      = {2012},
  abstract  = {A comprehensive numerical device simulation of the electrical and optical characteristics accompanied with experimental measurements of a new highly efficient system for polymer-based light-emitting diodes doped with phosphorescent dyes is presented. The system under investigation comprises an electron transporter attached to a polymer backbone blended with an electronically inert small molecule and an iridium-based green phosphorescent dye which serves as both emitter and hole transporter. The device simulation combines an electrical and an optical model. Based on the known highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels of all components as well as the measured electrical and optical characteristics of the devices, we model the emissive layer as an effective medium using the dye's HOMO as hole transport level and the polymer LUMO as electron transport level. By fine-tuning the injection barriers at the electron and hole-injecting contact, respectively, in simulated devices, unipolar device characteristics were fitted to the experimental data. Simulations using the so-obtained set of parameters yielded very good agreement to the measured currentvoltage, luminancevoltage characteristics, and the emission profile of entire bipolar light-emitting diodes, without additional fitting parameters. The simulation was used to gain insight into the physical processes and the mechanisms governing the efficiency of the organic light-emitting diode, including the position and extent of the recombination zone, carrier concentration profiles, and field distribution inside the device. The simulations show that the device is severely limited by hole injection, and that a reduction of the hole-injection barrier would improve the device efficiency by almost 50\%.},
  language  = {en}
}