@article{StoemmerZeimerPietsch1995,
  author    = {St{\"o}mmer, Ralph and Zeimer, Ute and Pietsch, Ullrich},
  title     = {Diffuse R{\"o}ntgenstreuung an LB-Filmen},
  year      = {1995},
  language  = {de}
}
@article{RosePietschZeimer1997,
  author    = {Rose, Dirk and Pietsch, Ullrich and Zeimer, Ute},
  title     = {Characterization of InGaAs single quantum wells buried in GaAs[001] by grazing incidence diffraction},
  year      = {1997},
  language  = {en}
}
@article{DarowskiPaschkePietschetal.1997,
  author    = {Darowski, Nora and Paschke, K. and Pietsch, Ullrich and Wang, K. H. and Forchel, Alfred and Baumbach, Tilo and Zeimer, Ute},
  title     = {Identification of a buried single quantum well within surface structurized semiconductors using depth resolved x-ray grazing-incidence diffraction},
  year      = {1997},
  language  = {en}
}
@phdthesis{Zeimer1998,
  author    = {Zeimer, Ute},
  title     = {Untersuchung des Einflusses der Wachstumsparameter der metallorganischen Gasphasenepitaxie auf das Relaxationsverhalten von GaAs/InxGa1-xAs/GaAs-Quantengr{\"a}ben},
  address   = {Potsdam},
  pages     = {122 S.},
  year      = {1998},
  language  = {de}
}
@article{DarowskiPietschZeimeretal.1998,
  author    = {Darowski, Nora and Pietsch, Ullrich and Zeimer, Ute and Smirnitzki, V. and Bugge, F.},
  title     = {Nondestructive analysis of a lateral GaAs nanostructure buried under AlGaAs using conventional high resolution and grazing incidence X-ray diffraction},
  year      = {1998},
  language  = {en}
}
@article{GrenzerSchomburgLingottetal.1998,
  author    = {Grenzer, J{\"o}rg and Schomburg, E. and Lingott, I. and Ignotov, A. a. and Renk, K. F. and Pietsch, Ullrich and Rose, Dirk and Zeimer, Ute and Melzer, B. J. and Ivanov, S. and Schaposchnikov, S. and Kop'ev, P. S. and Pavel'ev, D. G. and Koschurinov, Yu.},
  title     = {X-ray and transport characterization of an Esaki-Tsu superlattice device},
  year      = {1998},
  language  = {en}
}
@article{ZeimerBaumbachGrenzeretal.1999,
  author    = {Zeimer, Ute and Baumbach, Tilo and Grenzer, J{\"o}rg and L{\"u}bbert, Daniel and Mazuelas, A. and Pietsch, Ullrich and Erbert, G.},
  title     = {In-situ characterization of strain distribution in broad-area high-power lasers under operation by high- resolution x-ray diffrcation and topography using synchrotron radiation},
  year      = {1999},
  language  = {en}
}
@article{ZeimerBuggeGramlichetal.2000,
  author    = {Zeimer, Ute and Bugge, F. and Gramlich, S. and Smirnitzki, V. and Weyers, Markus and Tr{\"a}nkle, G. and Grenzer, J{\"o}rg and Pietsch, Ullrich and Cassabois, G. and Emiliani, V. and Lienau, C.},
  title     = {Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy},
  year      = {2000},
  language  = {en}
}
@article{PietschZeimerHofmannetal.2001,
  author    = {Pietsch, Ullrich and Zeimer, Ute and Hofmann, L. and Grenzer, J{\"o}rg and Gramlich, S.},
  title     = {Strain induced compositional modulations in AlGaAs overlayers induced by lateral surface gratings},
  issn      = {0272-9172},
  year      = {2001},
  language  = {en}
}
@article{ZeimerBuggeGramlichetal.2001,
  author    = {Zeimer, Ute and Bugge, F. and Gramlich, S. and Smirnitzki, V. and Weyers, Markus and Tr{\"a}nkle, G. and Grenzer, J{\"o}rg and Pietsch, Ullrich and Cassabois, G. and Emiliani, V. and Linau, Christoph},
  title     = {Evidence of strain-induced lateral carrier confinement in InGaAs-quantum wells by low-temperature near-field spectroscopy},
  year      = {2001},
  language  = {en}
}
@article{ZeimerGrenzerPietschetal.2001,
  author    = {Zeimer, Ute and Grenzer, J{\"o}rg and Pietsch, Ullrich and Bugge, F. and Smirnitzki, V. and Weyers, Markus},
  title     = {Investigation of strain-modulated InGaAs-nanostructures by grazing-incidence x-ray diffraction and photoluminescence},
  year      = {2001},
  language  = {en}
}
@article{PietschGrigorianGrenzeretal.2003,
  author    = {Pietsch, Ullrich and Grigorian, Souren A. and Grenzer, J{\"o}rg and Feranchuk, S. and Zeimer, Ute},
  title     = {Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures},
  year      = {2003},
  language  = {en}
}
@article{PietschZeimerGrenzeretal.2003,
  author    = {Pietsch, Ullrich and Zeimer, Ute and Grenzer, J{\"o}rg and Grigorian, Souren A. and Fricke, J. and Gramlich, S. and Bugge, F. and Weyers, Markus and Trankle, G.},
  title     = {Influence of lateral patterning geometry on lateral carrier confinement in strain-modulated InGaAs- nanostructures},
  year      = {2003},
  language  = {en}
}
@article{PietschGrenzerGrigorianetal.2004,
  author    = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Grigorian, Souren A. and Weyers, Markus and Zeimer, Ute and Feranchuk, S. and Fricke, J. and Kissel, H. and Knauer, A. and Tr{\"a}nkle, G.},
  title     = {Nanoengineering of lateral strain-modulation in quantum well heterostructures},
  year      = {2004},
  abstract  = {We have developed a method to design a lateral band-gap modulation in a quantum well heterostructure. The lateral strain variation is induced by patterning of a stressor layer grown on top of a single quantum well which itself is not patterned. The three-dimensional (3D) strain distribution within the lateral nanostructure is calculated using linear elasticity theory applying a finite element technique. Based on the deformation potential approach the calculated strain distribution is translated into a local variation of the band-gap energy. Using a given vertical layer structure we are able to optimize the geometrical parameters to provide a nanostructure with maximum lateral band-gap variation. Experimentally such a structure was realized by etching a surface grating into a tensile-strained InGaP stressor layer grown on top of a compressively strained InGaAs-single quantum well. The achieved 3D strain distribution and the induced band-gap variation are successfully probed by x-ray grazing incidence diffraction and low-temperature photoluminescence measurements, respectively},
  language  = {en}
}
@article{TalalaevTommElsaesseretal.2005,
  author    = {Talalaev, V and Tomm, JW and Elsaesser, T and Zeimer, Ute and Fricke, J and Knauer, A and Kissel, H and Weyers, Markus and Tarasov, GG and Grenzer, J{\"o}rg and Pietsch, Ullrich},
  title     = {Carrier dynamics in laterally strain-modulated InGaAs quantum wells},
  year      = {2005},
  abstract  = {We investigate the transient recombination and transfer properties of nonequilibrium carriers in an In0.16Ga0.84As/GaAs quantum well (QW) with an additional lateral confinement implemented by a patterned stressor layer. The structure thus contains QW- and quantum-wire-like areas. At low excitation densities, photoluminescence (PL) transients from both areas are well described by a rate equation model for a three-level system with a saturable interlevel carrier transfer representing the lateral drift of carriers from the QW regions into the wires. Small-signal carrier lifetimes for QW, wires, and transfer time from QW to wire are 180, 190, and 28 ps, respectively. For high excitation densities the time constants of the observed transients increase, in agreement with the model. In addition, QW and wire PL lines merge indicating a smoothening of the potential difference, i.e., the effective carrier confinement caused by the stressor structure becomes weaker with increasing excitation. (c) 2005 American Institute of Physics},
  language  = {en}
}
@article{ZeimerPietschGrenzeretal.2005,
  author    = {Zeimer, Ute and Pietsch, Ullrich and Grenzer, Joerg and Fricke, J. and Knauer, A. and Weyers, Markus},
  title     = {Optimised two layer overgrowth of a lateral strain-modulated nanostructure},
  issn      = {0925-8388},
  year      = {2005},
  abstract  = {Recently it has been shown that lateral carrier confinement in an InGaAs quantum well (QW) embedded in GaAs can be achieved by using a laterally patterned InGaP stressor layer on top of the heterostructure. To exploit this effect in a device the structure has to be planarized by a second epitaxial step. It has been shown that the lateral strain modulation almost vanishes after overgrowth with GaAs, whereas overgrowth with a single ternary layer of opposite strain compared to the stressor layer suffers from strain induced decomposition. Here we show that the lateral carrier confinement of the initially free standing nanostructure can almost be maintained using a two step process for overgrowth, where a strained thin ternary layer is grown first followed by GaAs up to complete planarization of the patterned structure. Thickness and composition of the ternary layer are adjusted on the basis of finite element calculations of the strain distribution (FEM). The strain field achieved after overgrowth is probed by X-ray grazing- incidence diffraction (GID). (c) 2005 Elsevier B.V. All rights reserved},
  language  = {en}
}