@phdthesis{RamanVenkatesan2022,
  author    = {Raman Venkatesan, Thulasinath},
  title     = {Tailoring applications-relevant properties in poly(vinylidene fluoride)-based homo-, co- and ter-polymers through modification of their three-phase structure},
  doi       = {10.25932/publishup-54966},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-549667},
  school      = {Universit{\"a}t Potsdam},
  pages     = {xx, 218},
  year      = {2022},
  abstract  = {Poly(vinylidene fluoride) (PVDF)-based homo-, co- and ter-polymers are well-known for their ferroelectric and relaxor-ferroelectric properties. Their semi-crystalline morphology consists of crystalline and amorphous phases, plus interface regions in between, and governs the relevant electro-active properties. In this work, the influence of chemical, thermal and mechanical treatments on the structure and morphology of PVDF-based polymers and on the related ferroelectric/relaxor-ferroelectric properties is investigated. Polymer films were prepared in different ways and subjected to various treatments such as annealing, quenching and stretching. The resulting changes in the transitions and relaxations of the polymer samples were studied by means of dielectric, thermal, mechanical and optical techniques. In particular, the origin(s) behind the mysterious mid-temperature transition (T_{mid}) that is observed in all PVDF-based polymers was assessed. A new hypothesis is proposed to describe the T_{mid} transition as a result of multiple processes taking place within the temperature range of the transition. The contribution of the individual processes to the observed overall transition depends on both the chemical structure of the monomer units and the processing conditions which also affect the melting transition. Quenching results in a decrease of the overall crystallinity and in smaller crystallites. On samples quenched after annealing, notable differences in the fractions of different crystalline phases have been observed when compared to samples that had been slowly cooled. Stretching of poly(vinylidene fluoride-tetrafluoroethylene) (P(VDF-TFE)) films causes an increase in the fraction of the ferroelectric β-phase with simultaneous increments in the melting point (T_m) and the crystallinity (\chi_c) of the copolymer. While an increase in the stretching temperature does not have a profound effect on the amount of the ferroelectric phase, its stability appears to improve. Measurements of the non-linear dielectric permittivity \varepsilon_2^\prime in a poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE- CFE)) relaxor-ferroelectric (R-F) terpolymer reveal peaks at 30 and 80 °C that cannot be identified in conventional dielectric spectroscopy. The former peak is associated with T_{mid}\ and may help to understand the non-zero \varepsilon_2^\prime values that are found for the paraelectric terpolymer phase. The latter peak can also be observed during cooling of P(VDF-TrFE) copolymer samples at 100 °C and is due to conduction processes and space-charge polarization as a result of the accumulation of real charges at the electrode-sample interface. Annealing lowers the Curie-transition temperature of the terpolymer as a consequence of its smaller ferroelectric-phase fraction, which by default exists even in terpolymers with relatively high CFE content. Changes in the transition temperatures are in turn related to the behavior of the hysteresis curves observed on differently heat-treated samples. Upon heating, the hysteresis curves evolve from those known for a ferroelectric to those of a typical relaxor-ferroelectric material. Comparing dielectric-hysteresis loops obtained at various temperatures, we find that annealed terpolymer films show higher electric-displacement values and lower coercive fields than the non-annealed samples - irrespective of the measurement temperature - and also exhibit ideal relaxor-ferroelectric behavior at ambient temperatures, which makes them excellent candidates for related applications at or near room temperature. However, non-annealed films - by virtue of their higher ferroelectric activity - show a larger and more stable remanent polarization at room temperature, while annealed samples need to be poled below 0 °C to induce a well-defined polarization. Overall, by modifying the three phases in PVDF-based polymers, it has been demonstrated how the preparation steps and processing conditions can be tailored to achieve the desired properties that are optimal for specific applications.},
  language  = {en}
}
@phdthesis{vonNordheim2018,
  author    = {von Nordheim, Danny},
  title     = {Dielectric non-linearities of P(VDF-TrFE) single and multilayers for memory applications},
  url       = {http://nbn-resolving.de/urn:nbn:de:kobv:517-opus4-421778},
  school      = {Universit{\"a}t Potsdam},
  pages     = {XVI, 109},
  year      = {2018},
  abstract  = {Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric thin films of different molar ratio have been studied with regard to data memory applications. Therefore, films with thicknesses of 200 nm and less have been spin coated from solution. Observations gained from single layers have been extended to multilayer capacitors and three terminal transistor devices. Besides conventional hysteresis measurements, the measurement of dielectric non-linearities has been used as a main tool of characterisation. Being a very sensitive and non-destructive method, non-linearity measurements are well suited for polarisation readout and property studies. Samples have been excited using a high quality, single-frequency sinusoidal voltage with an amplitude significantly smaller than the coercive field of the samples. The response was then measured at the excitation frequency and its higher harmonics. Using the measurement results, the linear and non-linear dielectric permittivities ɛ₁, ɛ₂ and ɛ₃ have been determined. The permittivities have been used to derive the temperature-dependent polarisation behaviour as well as the polarisation state and the order of the phase transitions. The coercive field in VDF-TrFE copolymers is high if compared to their ceramic competitors. Therefore, the film thickness had to be reduced significantly. Considering a switching voltage of 5 V and a coercive field of 50 MV/m, the film thickness has to be 100 nm and below. If the thickness becomes substantially smaller than the other dimensions, surface and interface layer effects become more pronounced. For thicker films of P(VDF-TrFE) with a molar fraction of 56/44 a second-order phase transition without a thermal hysteresis for an ɛ₁(T) temperature cycle has been predicted and observed. This however, could not be confirmed by the measurements of thinner films. A shift of transition temperatures as well as a temperature independent, non-switchable polarisation and a thermal hysteresis for P(VDF-TrFE) 56/44 have been observed. The impact of static electric fields on the polarisation and the phase transition has therefore been studied and simulated, showing that all aforementioned phenomena including a linear temperature dependence of the polarisation might originate from intrinsic electric fields. In further experiments the knowledge gained from single layer capacitors has been extended to bilayer copolymer thin films of different molar composition. Bilayers have been deposited by succeeding cycles of spin coating from solution. Single layers and their bilayer combination have been studied individually in order to prove the layers stability. The individual layers have been found to be physically stable. But while the bilayers reproduced the main ɛ₁(T) properties of the single layers qualitatively, quantitative numbers could not be explained by a simple serial connection of capacitors. Furthermore, a linear behaviour of the polarisation throughout the measured temperature range has been observed. This was found to match the behaviour predicted considering a constant electric field. Retention time is an important quantity for memory applications. Hence, the retention behaviour of VDF-TrFE copolymer thin films has been determined using dielectric non-linearities. The polarisation loss in P(VDF-TrFE) poled samples has been found to be less than 20\% if recorded over several days. The loss increases significantly if the samples have been poled with lower amplitudes, causing an unsaturated polarisation. The main loss was attributed to injected charges. Additionally, measurements of dielectric non-linearities have been proven to be a sensitive and non-destructive tool to measure the retention behaviour. Finally, a ferroelectric field effect transistor using mainly organic materials (FerrOFET) has been successfully studied. DiNaphtho[2,3-b:2',3'-f]Thieno[3,2-b]Thiophene (DNTT) has proven to be a stable, suitable organic semiconductor to build up ferroelectric memory devices. Furthermore, an oxidised aluminium bottom electrode and additional dielectric layers, i.e. parylene C, have proven to reduce the leakage current and therefore enhance the performance significantly.},
  language  = {en}
}