@article{WarbyZuZeiskeetal.2022, author = {Warby, Jonathan and Zu, Fengshuo and Zeiske, Stefan and Gutierrez-Partida, Emilio and Frohloff, Lennart and Kahmann, Simon and Frohna, Kyle and Mosconi, Edoardo and Radicchi, Eros and Lang, Felix and Shah, Sahil and Pena-Camargo, Francisco and Hempel, Hannes and Unold, Thomas and Koch, Norbert and Armin, Ardalan and De Angelis, Filippo and Stranks, Samuel D. and Neher, Dieter and Stolterfoht, Martin}, title = {Understanding performance limiting interfacial recombination in pin Perovskite solar cells}, series = {Advanced energy materials}, volume = {12}, journal = {Advanced energy materials}, number = {12}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.202103567}, pages = {10}, year = {2022}, abstract = {Perovskite semiconductors are an attractive option to overcome the limitations of established silicon based photovoltaic (PV) technologies due to their exceptional opto-electronic properties and their successful integration into multijunction cells. However, the performance of single- and multijunction cells is largely limited by significant nonradiative recombination at the perovskite/organic electron transport layer junctions. In this work, the cause of interfacial recombination at the perovskite/C-60 interface is revealed via a combination of photoluminescence, photoelectron spectroscopy, and first-principle numerical simulations. It is found that the most significant contribution to the total C-60-induced recombination loss occurs within the first monolayer of C-60, rather than in the bulk of C-60 or at the perovskite surface. The experiments show that the C-60 molecules act as deep trap states when in direct contact with the perovskite. It is further demonstrated that by reducing the surface coverage of C-60, the radiative efficiency of the bare perovskite layer can be retained. The findings of this work pave the way toward overcoming one of the most critical remaining performance losses in perovskite solar cells.}, language = {en} } @article{CrovettoKojdaYietal.2022, author = {Crovetto, Andrea and Kojda, Danny and Yi, Feng and Heinselman, Karen N. and LaVan, David A. and Habicht, Klaus and Unold, Thomas and Zakutayev, Andriy}, title = {Crystallize It before It diffuses}, series = {Journal of the american chemical society}, volume = {144}, journal = {Journal of the american chemical society}, number = {29}, publisher = {American Chemical Society}, address = {Washington}, issn = {0002-7863}, doi = {10.1021/jacs.2c04868}, pages = {13334 -- 13343}, year = {2022}, abstract = {Numerous phosphorus-rich metal phosphides containing both P-P bonds and metal-P bonds are known from the solid-state chemistry literature. A method to grow these materials in thin-film form would be desirable, as thin films are required in many applications and they are an ideal platform for high-throughput studies. In addition, the high density and smooth surfaces achievable in thin films are a significant advantage for characterization of transport and optical properties. Despite these benefits, there is hardly any published work on even the simplest binary phosphorus-rich phosphide films. Here, we demonstrate growth of single-phase CuP2 films by a two-step process involving reactive sputtering of amorphous CuP2+x and rapid annealing in an inert atmosphere. At the crystallization temperature, CuP2 is thermodynamically unstable with respect to Cu3P and P-4. However, CuP2 can be stabilized if the amorphous precursors are mixed on the atomic scale and are sufficiently close to the desired composition (neither too P poor nor too P rich). Fast formation of polycrystalline CuP2, combined with a short annealing time, makes it possible to bypass the diffusion processes responsible for decomposition. We find that thin-film CuP2 is a 1.5 eV band gap semiconductor with interesting properties, such as a high optical absorption coefficient (above 10(5) cm(-1)), low thermal conductivity (1.1 W/(K m)), and composition-insensitive electrical conductivity (around 1 S/cm). We anticipate that our processing route can be extended to other phosphorus-rich phosphides that are still awaiting thin-film synthesis and will lead to a more complete understanding of these materials and of their potential applications.}, language = {en} } @article{PenaCamargoThiesbrummelHempeletal.2022, author = {Pena-Camargo, Francisco and Thiesbrummel, Jarla and Hempel, Hannes and Musiienko, Artem and Le Corre, Vincent M. and Diekmann, Jonas and Warby, Jonathan and Unold, Thomas and Lang, Felix and Neher, Dieter and Stolterfoht, Martin}, title = {Revealing the doping density in perovskite solar cells and its impact on device performance}, series = {Applied physics reviews}, volume = {9}, journal = {Applied physics reviews}, number = {2}, publisher = {AIP Publishing}, address = {Melville}, issn = {1931-9401}, doi = {10.1063/5.0085286}, pages = {11}, year = {2022}, abstract = {Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic doping density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic doping density for a range of different lead-halide perovskite systems. Optical and electrical characterization techniques, comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the doping density. The obtained values are subsequently compared to the electrode charge per cell volume under short-circuit conditions ( CUbi/eV), which amounts to roughly 10(16) cm(-3). This figure of merit represents the critical limit below which doping-induced charges do not influence the device performance. The experimental results consistently demonstrate that the doping density is below this critical threshold 10(12) cm(-3), which means << CUbi / e V) for all common lead-based metal-halide perovskites. Nevertheless, although the density of doping-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations, which confirm that the device performance is not affected by such low doping densities.}, language = {en} } @article{KirchartzMarquezStolterfohtetal.2020, author = {Kirchartz, Thomas and M{\´a}rquez, Jos{\´e} A. and Stolterfoht, Martin and Unold, Thomas}, title = {Photoluminescence-based characterization of halide perovskites for photovoltaics}, series = {Advanced Energy Materials}, volume = {10}, journal = {Advanced Energy Materials}, number = {26}, publisher = {Wiley}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.201904134}, pages = {1 -- 21}, year = {2020}, abstract = {Photoluminescence spectroscopy is a widely applied characterization technique for semiconductor materials in general and halide perovskite solar cell materials in particular. It can give direct information on the recombination kinetics and processes as well as the internal electrochemical potential of free charge carriers in single semiconductor layers, layer stacks with transport layers, and complete solar cells. The correct evaluation and interpretation of photoluminescence requires the consideration of proper excitation conditions, calibration and application of the appropriate approximations to the rather complex theory, which includes radiative recombination, non-radiative recombination, interface recombination, charge transfer, and photon recycling. In this article, an overview is given of the theory and application to specific halide perovskite compositions, illustrating the variables that should be considered when applying photoluminescence analysis in these materials.}, language = {en} } @article{LaiLuoZwirneretal.2022, author = {Lai, Huagui and Luo, Jincheng and Zwirner, Yannick and Olthof, Selina and Wieczorek, Alexander and Ye, Fangyuan and Jeangros, Quentin and Yin, Xinxing and Akhundova, Fatima and Ma, Tianshu and He, Rui and Kothandaraman, Radha K. and Chin, Xinyu and Gilshtein, Evgeniia and Muller, Andre and Wang, Changlei and Thiesbrummel, Jarla and Siol, Sebastian and Prieto, Jose Marquez and Unold, Thomas and Stolterfoht, Martin and Chen, Cong and Tiwari, Ayodhya N. and Zhao, Dewei and Fu, Fan}, title = {High-performance flexible all-Perovskite tandem solar cells with reduced V-OC-deficit in wide-bandgap subcell}, series = {Advanced energy materials}, volume = {12}, journal = {Advanced energy materials}, number = {45}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1614-6832}, doi = {10.1002/aenm.202202438}, pages = {12}, year = {2022}, abstract = {Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as their low open-circuit voltage (V-OC). Here, it is reported that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, a postdeposition treatment with 2-thiopheneethylammonium chloride is employed to further suppress the bulk and interfacial recombination, boosting the V-OC of the WBG top cell to 1.29 V. Based on this, the first proof-of-concept four-terminal all-perovskite flexible TSC with a power conversion efficiency of 22.6\% is presented. When integrating into two-terminal flexible tandems, 23.8\% flexible all-perovskite TSCs with a superior V-OC of 2.1 V is achieved, which is on par with the V-OC reported on the 28\% all-perovskite tandems grown on the rigid substrate.}, language = {en} } @article{CrovettoHempelRusuetal.2020, author = {Crovetto, Andrea and Hempel, Hannes and Rusu, Marin and Choubrac, Leo and Kojda, Sandrino Danny and Habicht, Klaus and Unold, Thomas}, title = {Water adsorption enhances electrical conductivity in transparent p-type CuI}, series = {ACS applied materials \& interfaces}, volume = {12}, journal = {ACS applied materials \& interfaces}, number = {43}, publisher = {American Chemical Society}, address = {Washington, DC}, issn = {1944-8244}, doi = {10.1021/acsami.0c11040}, pages = {48741 -- 48747}, year = {2020}, abstract = {CuI has been recently rediscovered as a p-type transparent conductor with a high figure of merit. Even though many metal iodides are hygroscopic, the effect of moisture on the electrical properties of CuI has not been clarified. In this work, we observe a 2-fold increase in the conductivity of CuI after exposure to ambient humidity for 5 h, followed by slight long-term degradation. Simultaneously, the work function of CuI decreases by almost 1 eV, which can explain the large spread in the previously reported work function values. The conductivity increase is partially reversible and is maximized at intermediate humidity levels. On the basis of the large intragrain mobility measured by THz spectroscopy, we suggest that hydration of grain boundaries may be beneficial for the overall hole mobility.}, language = {en} } @article{StolterfohtWolffMarquezetal.2018, author = {Stolterfoht, Martin and Wolff, Christian Michael and Marquez, Jose A. and Zhang, Shanshan and Hages, Charles J. and Rothhardt, Daniel and Albrecht, Steve and Burn, Paul L. and Meredith, Paul and Unold, Thomas and Neher, Dieter}, title = {Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells}, series = {Nature Energy}, volume = {3}, journal = {Nature Energy}, number = {10}, publisher = {Nature Publ. Group}, address = {London}, issn = {2058-7546}, doi = {10.1038/s41560-018-0219-8}, pages = {847 -- 854}, year = {2018}, abstract = {The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombination pathways in planar pintype perovskite solar cells with undoped organic charge transport layers. We find significant quasi-Fermi-level splitting losses (135 meV) in the perovskite bulk, whereas interfacial recombination results in an additional free energy loss of 80 meV at each individual interface, which limits the open-circuit voltage (V-oc) of the complete cell to similar to 1.12 V. Inserting ultrathin interlayers between the perovskite and transport layers leads to a substantial reduction of these interfacial losses at both the p and n contacts. Using this knowledge and approach, we demonstrate reproducible dopant-free 1 cm(2) perovskite solar cells surpassing 20\% efficiency (19.83\% certified) with stabilized power output, a high V-oc (1.17 V) and record fill factor (>81\%).}, language = {en} } @article{LehmannFranzToebbensetal.2019, author = {Lehmann, Frederike and Franz, Alexandra and Toebbens, Daniel M. and Levcenco, Sergej and Unold, Thomas and Taubert, Andreas and Schorr, Susan}, title = {The phase diagram of a mixed halide (Br, I) hybrid perovskite obtained by synchrotron X-ray diffraction}, series = {RSC Advances}, volume = {9}, journal = {RSC Advances}, number = {20}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {2046-2069}, doi = {10.1039/c8ra09398a}, pages = {11151 -- 11159}, year = {2019}, abstract = {By using synchrotron X-ray powder diffraction, the temperature dependent phase diagram of the hybrid perovskite tri-halide compounds, methyl ammonium lead iodide (MAPbI3, MA+ = CH3NH3+) and methyl ammonium lead bromide (MAPbBr3), as well as of their solid solutions, has been established. The existence of a large miscibility gap between 0.29 ≤ x ≤ 0.92 (±0.02) for the MAPb(I1-xBrx)3 solid solution has been proven. A systematic study of the lattice parameters for the solid solution series at room temperature revealed distinct deviations from Vegard's law. Furthermore, temperature dependent measurements showed that a strong temperature dependency of lattice parameters from the composition is present for iodine rich compositions. In contrast, the bromine rich compositions show an unusually low dependency of the phase transition temperature from the degree of substitution.}, language = {en} } @article{CaprioglioZuWolffetal.2019, author = {Caprioglio, Pietro and Zu, Fengshuo and Wolff, Christian Michael and Prieto, Jose A. Marquez and Stolterfoht, Martin and Becker, Pascal and Koch, Norbert and Unold, Thomas and Rech, Bernd and Albrecht, Steve and Neher, Dieter}, title = {High open circuit voltages in pin-type perovskite solar cells through strontium addition}, series = {Sustainable Energy \& Fuels}, volume = {3}, journal = {Sustainable Energy \& Fuels}, number = {2}, publisher = {Royal Society of Chemistry}, address = {Cambridge}, issn = {2398-4902}, doi = {10.1039/c8se00509e}, pages = {550 -- 563}, year = {2019}, abstract = {The incorporation of even small amounts of strontium (Sr) into lead-base hybrid quadruple cation perovskite solar cells results in a systematic increase of the open circuit voltage (V-oc) in pin-type perovskite solar cells. We demonstrate via absolute and transient photoluminescence (PL) experiments how the incorporation of Sr significantly reduces the non-radiative recombination losses in the neat perovskite layer. We show that Sr segregates at the perovskite surface, where it induces important changes of morphology and energetics. Notably, the Sr-enriched surface exhibits a wider band gap and a more n-type character, accompanied with significantly stronger surface band bending. As a result, we observe a significant increase of the quasi-Fermi level splitting in the neat perovskite by reduced surface recombination and more importantly, a strong reduction of losses attributed to non-radiative recombination at the interface to the C-60 electron-transporting layer. The resulting solar cells exhibited a V-oc of 1.18 V, which could be further improved to nearly 1.23 V through addition of a thin polymer interlayer, reducing the non-radiative voltage loss to only 110 meV. Our work shows that simply adding a small amount of Sr to the precursor solutions induces a beneficial surface modification in the perovskite, without requiring any post treatment, resulting in high efficiency solar cells with power conversion efficiency (PCE) up to 20.3\%. Our results demonstrate very high V-oc values and efficiencies in Sr-containing quadruple cation perovskite pin-type solar cells and highlight the imperative importance of addressing and minimizing the recombination losses at the interface between perovskite and charge transporting layer.}, language = {en} } @article{KegelmannTockhornWolffetal.2019, author = {Kegelmann, Lukas and Tockhorn, Philipp and Wolff, Christian Michael and M{\´a}rquez, Jos{\´e} A. and Caicedo D{\´a}vila, Sebasti{\´a}n and Korte, Lars and Unold, Thomas and Loevenich, Wilfried and Neher, Dieter and Rech, Bernd and Albrecht, Steve}, title = {Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells}, series = {ACS applied materials \& interfaces}, volume = {11}, journal = {ACS applied materials \& interfaces}, number = {9}, publisher = {American Chemical Society}, address = {Washington}, issn = {1944-8244}, doi = {10.1021/acsami.9b01332}, pages = {9172 -- 9181}, year = {2019}, abstract = {Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22\%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages (V-OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7\% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V-OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.}, language = {en} }