@article{SavaSchulzZhuetal.1995,
  author    = {Sava, Ion and Schulz, Burkhard and Zhu, Shigen and Bruma, Maria},
  title     = {Synthesis and characterization of new silicon-containing poly(arylene-1,3,4-oxadiazole)s},
  issn      = {0954-0083},
  doi       = {10.1088/0954-0083/7/4/011},
  year      = {1995},
  language  = {en}
}
@article{BrumaHamciucSavaetal.1996,
  author    = {Bruma, Maria and Hamciuc, Corneliu and Sava, Ion and Hamciuc, Elena and Mercer, Frank W. and Fritzsche, P. and Schulz, Burkhard},
  title     = {High temperature polyamides containing pendant imide groups},
  year      = {1996},
  language  = {en}
}
@article{SavaSzesztayBrumaetal.1997,
  author    = {Sava, Ion and Szesztay, Marta and Bruma, Maria and Mercer, Frank W. and Schulz, Burkhard},
  title     = {Compared properties of aromatic polyamides containing silicon in the chain},
  year      = {1997},
  abstract  = {Two series of aromatic polyamides incorporating silicon together with phenylquinoxaline or with hexafluoroisopropylidene groups have been synthesized and their properties have been characterized and compared with those of related polymers. These polymers are easily soluble in polar amidic solvents such as N-rnethyl-2-pyrrolidinone and dimethylformamide, and in tetrahydrofuran, and can be cast into thin, transparent films from solution. The polyamides have weight- and number-average molecular weights in the range of 10000-40000 and 3000-6000, respectively, and polydispersities in the range of 3-10. They show glass transition temperatures in the range of 236 °C-275 °C and decomposition temperatures above 400 °C. The polymer films have low dielectric constants in the range of 3.26-3.68, and good mechanical properties (tensile strength 74-100 MPa, tensile modulus 180-386 MPa), thus being comparable with other high performance dielectrics.},
  language  = {en}
}
@article{SavaBrumaSchulzetal.1997,
  author    = {Sava, Ion and Bruma, Maria and Schulz, Burkhard and Mercer, Frank W. and Belomoina, Nataliya},
  title     = {Synthesis and Properties of Silicon-containing Polyamides},
  year      = {1997},
  abstract  = {A series of aromatic polyamides incorporating silicon together with phenylquinoxaline or with hexafluoroisopropylidene groups has been synthesized by solution polycondensation of a silicon-containing diacid chloride with aromatic diamines having phenylquinoxaline rings or hexafluoroisopropylidene groups. These polymers are easily soluble in polar aprotic solvents, such as N-methylpyrrolidinone and dimethylformamide, and in tetrahydrofurane, and can be solution-cast into thin, transparent films having low dielectric constant, in the range of 3.26 to 3.68. These polymers show high thermal stability with decomposition temperature being above 400 °C and glass transition temperature in the range of 236 °C to 275 °C.},
  language  = {en}
}
@article{BrumaSavaMerceretal.1998,
  author    = {Bruma, Maria and Sava, Ion and Mercer, Frank W. and Reddy, Victor N. and K{\"o}pnick, Thomas and Stiller, Burkhard and Schulz, Burkhard},
  title     = {Silicon-containing poly(amide-ether)s},
  year      = {1998},
  abstract  = {New aromatic poly(amide-ether)s (II) have been synthesized by solution polycondensation of various aromatic diamines having two ether bridges (I) with a diacid chloride containing silicon, namely bis(chlorocarbonylphenyl)- diphenyIsilane. These polymers are easy soluble in polar amidic solvents such as N-methylpyrrolidinone or dimethylformamide and can be cast into thin flexible films or coatings from such solutions. They show high thermal stability with initial decomposition temperature being above 400 °C. Their glass transition temperatures lie in the range of 220-250 °C, except for polymer He which did not show a clear Tg when heated in a differential scanning calorimetry experiment up to 300 °C. The large interval between the glass transition and decomposition temperatures of pnlymers Ia-Id could be advantageous for their processing via compression molding. The polymer coatings deposited by the spincoating, technique onto silicon wafers showed a very smooth, pinhole-free surface in atomic force microscopy investigations. The free-standing films of 20-30 mm thickness show low dielectric constant, in the range of 3.65-3.78, which is promising for future application as high performance dielectrics.},
  language  = {en}
}
@article{SavaBrumaSchulzetal.2005,
  author    = {Sava, Ion and Bruma, Maria and Schulz, Burkhard and K{\"o}pnick, Thomas},
  title     = {Comparison of properties of silicon-containing poly(amide-imide)s},
  issn      = {0954-0083},
  year      = {2005},
  abstract  = {New silicon-containing poly(amide-imide)s have been synthesized by direct polycondensation of various aromatic diamines with a dicarboxylic acid containing the dimethylsilylene group and preformed in-tide cycles. These polymers are easily soluble in polar amidic solvents such as N-methylpyrrolidinone (NMP) or dimethylformamide (DMF) and can be cast into thin flexible films or coatings from such solutions. They show high thermal stability, with initial decomposition temperature being above 400 C and glass transition temperature in the range of 220-270 degrees C. Very thin polymer films deposited by spincoating technique onto silicon wafers showed a smooth, pinhole-free surface in atomic force microscopy investigations},
  language  = {en}
}