@article{AksuFrascaWollenbergeretal.2011,
  author    = {Aksu, Yilmaz and Frasca, Stefano and Wollenberger, Ursula and Driess, Matthias and Thomas, Arne},
  title     = {A molecular precursor approach to tunable porous tin-rich indium tin oxide with durable high electrical conductivity for bioelectronic devices},
  series = {Chemistry of materials : a publication of the American Chemical Society},
  volume    = {23},
  journal   = {Chemistry of materials : a publication of the American Chemical Society},
  number    = {7},
  publisher = {American Chemical Society},
  address   = {Washington},
  issn      = {0897-4756},
  doi       = {10.1021/cm103087p},
  pages     = {1798 -- 1804},
  year      = {2011},
  abstract  = {The preparation of porous, i.e., high surface area electrodes from transparent conducting oxides, is a valuable goal in materials chemistry as such electrodes can enable further development of optoelectronic, electrocatalytic, or bioelectronic devices. In this work the first tin-rich mesoporous indium tin oxide is prepared using the molecular heterobimetallic single-source precursor, indium tin tris-tert-butoxide, together with an appropriate structure-directing template, yielding materials with high surface areas and tailorable pore size. The resulting mesoporous tin-rich ITO films show a high and durable electrical conductivity and transparency, making them interesting materials for hosting electroactive biomolecules such as proteins. In fact, its unique performance in bioelectronic applications has been demonstrated by immobilization of high amounts of cytochrome c into the mesoporous film which undergo redox processes directly with the conductive electrode material.},
  language  = {en}
}