@article{KowarikGerlachLeitenbergeretal.2007,
  author    = {Kowarik, Stefan and Gerlach, Andreas and Leitenberger, Wolfram and Hu J, Witte and W{\"o}ll, Christoph and Schreiber, Frank},
  title     = {Energy-dispersive X-ray reflectivity and GID for real-time growth studies of pentacene thin films},
  issn      = {0040-6090},
  doi       = {10.1016/j.tsf.2006.12.020},
  year      = {2007},
  abstract  = {We use energy-dispersive X-ray reflectivity and grazing incidence diffraction (GID) to follow the growth of the crystalline organic semiconductor pentacene on silicon oxide in-situ and in real-time. The technique allows for monitoring Bragg reflections and measuring X-ray growth oscillations with a time resolution of 1 min in a wide q-range in reciprocal space extending over 0.25-0.80 angstrom(-1), i.e. sampling a large number of Fourier components simultaneously. A quantitative analysis of growth oscillations at several q-points yields the evolution of the surface roughness, showing a marked transition from layer-by-layer growth to strong roughening after four monolayers of pentacene have been deposited. (c) 2006 Elsevier B.V. All rights reserved.},
  language  = {en}
}