@article{PietschLeitenbergerWendrocketal.2003,
  author    = {Pietsch, Ullrich and Leitenberger, Wolfram and Wendrock, Horst and Bischoff, Lothar and Panzner, Tobias and Grenzer, J{\"o}rg and Pucher, Andreas},
  title     = {Double pinhole diffraction of white synchrotron radiation},
  year      = {2003},
  language  = {en}
}
@article{LeitenbergerWendrockBischoffetal.2004,
  author    = {Leitenberger, Wolfram and Wendrock, Horst and Bischoff, Lothar and Weitkamp, Timm},
  title     = {Pinhole interferometry with coherent hard X-rays},
  year      = {2004},
  abstract  = {This paper discusses the experimental realisation of two types of X-ray interferometer based on pinhole diffraction. In both interferometers the beam splitter was a thin metal foil containing micrometer pinholes to divide the incident X-ray wave into two coherent waves. The interference pattern was studied using an energy-dispersive detector to simultaneously investigate in a large spectral range the diffraction properties of the white synchrotron radiation. For a highly absorbing pinhole mask the interference fringes from the classical Young's double-pinhole experiment were recorded and the degree of coherence of X-rays could be determined. In the case of low absorption of the metal foil at higher X-ray energies (> 15 keV) the interference pattern of a point diffraction interferometer was observed using the same set-up. The spectral refraction index of the metal foil was determined},
  language  = {en}
}
@article{PietschGrenzerBischoff2005,
  author    = {Pietsch, Ullrich and Grenzer, J{\"o}rg and Bischoff, Lothar},
  title     = {Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and An ion beam implantation},
  year      = {2005},
  abstract  = {Strain analysis of a laterally patterned Si-wafer was carried out utilizing X-ray grazing-incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 x 10(14) cm(-2)) or 70 keV Ge++ ions (dose: 8 X 10(14) cm(-1)). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (c) 2005 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim},
  language  = {en}
}