@article{SchubertCollinsMangoldetal.2014, author = {Schubert, Marcel and Collins, Brian A. and Mangold, Hannah and Howard, Ian A. and Schindler, Wolfram and Vandewal, Koen and Roland, Steffen and Behrends, Jan and Kraffert, Felix and Steyrleuthner, Robert and Chen, Zhihua and Fostiropoulos, Konstantinos and Bittl, Robert and Salleo, Alberto and Facchetti, Antonio and Laquai, Frederic and Ade, Harald W. and Neher, Dieter}, title = {Correlated donor/acceptor crystal orientation controls photocurrent generation in all-polymer solar cells}, series = {Advanced functional materials}, volume = {24}, journal = {Advanced functional materials}, number = {26}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {1616-301X}, doi = {10.1002/adfm.201304216}, pages = {4068 -- 4081}, year = {2014}, abstract = {New polymers with high electron mobilities have spurred research in organic solar cells using polymeric rather than fullerene acceptors due to their potential of increased diversity, stability, and scalability. However, all-polymer solar cells have struggled to keep up with the steadily increasing power conversion efficiency of polymer: fullerene cells. The lack of knowledge about the dominant recombination process as well as the missing concluding picture on the role of the semi-crystalline microstructure of conjugated polymers in the free charge carrier generation process impede a systematic optimization of all-polymer solar cells. These issues are examined by combining structural and photo-physical characterization on a series of poly(3-hexylthiophene) (donor) and P(NDI2OD-T2) (acceptor) blend devices. These experiments reveal that geminate recombination is the major loss channel for photo-excited charge carriers. Advanced X-ray and electron-based studies reveal the effect of chloronaphthalene co-solvent in reducing domain size, altering domain purity, and reorienting the acceptor polymer crystals to be coincident with those of the donor. This reorientation correlates well with the increased photocurrent from these devices. Thus, effi cient split-up of geminate pairs at polymer/polymer interfaces may necessitate correlated donor/acceptor crystal orientation, which represents an additional requirement compared to the isotropic fullerene acceptors.}, language = {en} } @article{RivnaySteyrleuthnerJimisonetal.2011, author = {Rivnay, Jonathan and Steyrleuthner, Robert and Jimison, Leslie H. and Casadei, Alberto and Chen, Zhihua and Toney, Michael F. and Facchetti, Antonio and Neher, Dieter and Salleo, Alberto}, title = {Drastic control of texture in a high performance n-Type polymeric semiconductor and implications for charge transport}, series = {Macromolecules : a publication of the American Chemical Society}, volume = {44}, journal = {Macromolecules : a publication of the American Chemical Society}, number = {13}, publisher = {American Chemical Society}, address = {Washington}, issn = {0024-9297}, doi = {10.1021/ma200864s}, pages = {5246 -- 5255}, year = {2011}, abstract = {Control of crystallographic texture from mostly face-on to edge-on is observed for the film morphology of the n-type semicrystalline polymer [N,N-9-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diy1]alt-5,59-(2,29-bithiophene)}, P(NDI2OD-T2), when annealing the film to the polymer melting point followed by slow cooling to ambient temperature. A variety of X-ray diffraction analyses, including pole figure construction and Fourier transform peak shape deconvolution, are employed to quantify the texture change, relative degree of crystallinity and lattice order. We find that annealing the polymer film to the melt leads to a shift from 77.5\% face-on to 94.6\% edge-on lamellar texture as well as to a 2-fold increase in crystallinity and a 40\% decrease in intracrystallite cumulative disorder. The texture change results in a significant drop in the electron-only diode current density through the film thickness upon melt annealing while little change is observed in the in-plane transport of bottom gated thin film transistors. This suggests that the texture change is prevalent in the film interior and that either the (bottom) surface structure is different from the interior structure or the intracrystalline order and texture play a secondary role in transistor transport for this material.}, language = {en} } @article{LuDiPietroKoellnetal.2016, author = {Lu, Guanghao and Di Pietro, Riccardo and K{\"o}lln, Lisa Sophie and Nasrallah, Iyad and Zhou, Ling and Mollinger, Sonya and Himmelberger, Scott and Koch, Norbert and Salleo, Alberto and Neher, Dieter}, title = {Dual-Characteristic Transistors Based on Semiconducting Polymer Blends}, series = {Advanced electronic materials}, volume = {2}, journal = {Advanced electronic materials}, publisher = {Wiley-Blackwell}, address = {Hoboken}, issn = {2199-160X}, doi = {10.1002/aelm.201600267}, pages = {2344 -- 2351}, year = {2016}, abstract = {A dual-characteristic polymer field-effect transistor has markedly different characteristics in low and high voltage operations. In the low-voltage range (<5 V) it shows sharp subthreshold slopes (0.3-0.4 V dec\&\#8722;1), using which a low-voltage inverter with gain 8 is realized, while high-voltage (>5 V) induces symmetric current with regard to drain and gate voltages, leading to discrete differential (trans) conductances.}, language = {en} } @article{VandewalAlbrechtHokeetal.2014, author = {Vandewal, Koen and Albrecht, Steve and Hoke, Eric T. and Graham, Kenneth R. and Widmer, Johannes and Douglas, Jessica D. and Schubert, Marcel and Mateker, William R. and Bloking, Jason T. and Burkhard, George F. and Sellinger, Alan and Frechet, Jean M. J. and Amassian, Aram and Riede, Moritz K. and McGehee, Michael D. and Neher, Dieter and Salleo, Alberto}, title = {Efficient charge generation by relaxed charge-transfer states at organic interfaces}, series = {Nature materials}, volume = {13}, journal = {Nature materials}, number = {1}, publisher = {Nature Publ. Group}, address = {London}, issn = {1476-1122}, doi = {10.1038/NMAT3807}, pages = {63 -- 68}, year = {2014}, abstract = {carriers on illumination. Efficient organic solar cells require a high yield for this process, combined with a minimum of energy losses. Here, we investigate the role of the lowest energy emissive interfacial charge-transfer state (CT1) in the charge generation process. We measure the quantum yield and the electric field dependence of charge generation on excitation of the charge-transfer (CT) state manifold viaweakly allowed, low-energy optical transitions. For a wide range of photovoltaic devices based on polymer: fullerene, small-molecule:C-60 and polymer: polymer blends, our study reveals that the internal quantum efficiency (IQE) is essentially independent of whether or not D, A or CT states with an energy higher than that of CT1 are excited. The best materials systems show an IQE higher than 90\% without the need for excess electronic or vibrational energy.}, language = {en} } @article{LuBlakesleyHimmelbergeretal.2013, author = {Lu, Guanghao and Blakesley, James C. and Himmelberger, Scott and Pingel, Patrick and Frisch, Johannes and Lieberwirth, Ingo and Salzmann, Ingo and Oehzelt, Martin and Di Pietro, Riccardo and Salleo, Alberto and Koch, Norbert and Neher, Dieter}, title = {Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors}, series = {Nature Communications}, volume = {4}, journal = {Nature Communications}, number = {1-2}, publisher = {Nature Publ. Group}, address = {London}, issn = {2041-1723}, doi = {10.1038/ncomms2587}, pages = {8}, year = {2013}, abstract = {Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt\% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.}, language = {en} } @article{AlbrechtVandewalTumblestonetal.2014, author = {Albrecht, Steve and Vandewal, Koen and Tumbleston, John R. and Fischer, Florian S. U. and Douglas, Jessica D. and Frechet, Jean M. J. and Ludwigs, Sabine and Ade, Harald W. and Salleo, Alberto and Neher, Dieter}, title = {On the efficiency of charge transfer state splitting in polymer: Fullerene solar cells}, series = {Advanced materials}, volume = {26}, journal = {Advanced materials}, number = {16}, publisher = {Wiley-VCH}, address = {Weinheim}, issn = {0935-9648}, doi = {10.1002/adma.201305283}, pages = {2533 -- 2539}, year = {2014}, language = {en} } @article{SteyrleuthnerDiPietroCollinsetal.2014, author = {Steyrleuthner, Robert and Di Pietro, Riccardo and Collins, Brian A. and Polzer, Frank and Himmelberger, Scott and Schubert, Marcel and Chen, Zhihua and Zhang, Shiming and Salleo, Alberto and Ade, Harald W. and Facchetti, Antonio and Neher, Dieter}, title = {The Role of Regioregularity, Crystallinity, and Chain Orientation on Electron Transport in a High-Mobility n-Type Copolymer}, series = {Journal of the American Chemical Society}, volume = {136}, journal = {Journal of the American Chemical Society}, number = {11}, publisher = {American Chemical Society}, address = {Washington}, issn = {0002-7863}, doi = {10.1021/ja4118736}, pages = {4245 -- 4256}, year = {2014}, language = {en} } @misc{CardinalettiKestersBerthoetal.2014, author = {Cardinaletti, Ilaria and Kesters, Jurgen and Bertho, Sabine and Conings, Bert and Piersimoni, Fortunato and Lutsen, Laurence and Nesladek, Milos and Van Mele, Bruno and Van Assche, Guy and Vandewal, Koen and Salleo, Alberto and Vanderzande, Dirk and Maes, Wouter and Manca, Jean V.}, title = {Toward bulk heterojunction polymer solar cells with thermally stable active layer morphology}, series = {Journal of photonics for energy}, volume = {4}, journal = {Journal of photonics for energy}, publisher = {SPIE}, address = {Bellingham}, issn = {1947-7988}, doi = {10.1117/1.JPE.4.040997}, pages = {12}, year = {2014}, abstract = {When state-of-the-art bulk heterojunction organic solar cells with ideal morphology are exposed to prolonged storage or operation at elevated temperatures, a thermally induced disruption of the active layer blend can occur, in the form of a separation of donor and acceptor domains, leading to diminished photovoltaic performance. Toward the long-term use of organic solar cells in real-life conditions, an important challenge is, therefore, the development of devices with a thermally stable active layer morphology. Several routes are being explored, ranging from the use of high glass transition temperature, cross-linkable and/or side-chain functionalized donor and acceptor materials, to light-induced dimerization of the fullerene acceptor. A better fundamental understanding of the nature and underlying mechanisms of the phase separation and stabilization effects has been obtained through a variety of analytical, thermal analysis, and electro-optical techniques. Accelerated aging systems have been used to study the degradation kinetics of bulk heterojunction solar cells in situ at various temperatures to obtain aging models predicting solar cell lifetime. The following contribution gives an overview of the current insights regarding the intrinsic thermally induced aging effects and the proposed solutions, illustrated by examples of our own research groups. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License.}, language = {en} }