TY  - JOUR
A1  - Lu, Guanghao
A1  - Blakesley, James C.
A1  - Himmelberger, Scott
A1  - Pingel, Patrick
A1  - Frisch, Johannes
A1  - Lieberwirth, Ingo
A1  - Salzmann, Ingo
A1  - Oehzelt, Martin
A1  - Di Pietro, Riccardo
A1  - Salleo, Alberto
A1  - Koch, Norbert
A1  - Neher, Dieter
T1  - Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
T2  - Nature Communications
N2  - Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
Y1  - 2013
UR  - https://publishup.uni-potsdam.de/frontdoor/index/index/docId/35157
SN  - 2041-1723
VL  - 4
IS  - 1-2
PB  - Nature Publ. Group
CY  - London
ER  -