TY  - JOUR
A1  - Feigl, Ludwig
A1  - Pippel, Eckhard
A1  - Pintilie, Lucian
A1  - Alexe, Marin
A1  - Hesse, Dietrich
T1  - Chromium doping of epitaxial PbZr0.2Ti0.8O3 thin films
N2  - Epitaxial ferroelectric PbZr0.2Ti0.8O3 thin films were grown by pulsed laser deposition. PbZr0.2Ti0.8O3 was doped with Cr acting as acceptor ion. Microstructural characterization was performed by (high resolution) transmission electron microscopy. The voltage dependence of polarization, dielectric constant, and leakage current were measured with respect to the Cr content. To derive the electronic properties, PZT was considered as a wide-gap semiconductor which allows treating the metal-PZT interface as a Schottky contact. The Cr was found to facilitate the elastic relaxation of the film. Furthermore, the leakage current was increased through a reduction of the Schottky barrier.
Y1  - 2009
UR  - https://publishup.uni-potsdam.de/frontdoor/index/index/docId/31638
UR  - http://jap.aip.org/
SN  - 0021-8979
ER  -