TY  - JOUR
A1  - Kalbitz, Rene
A1  - Frübing, Peter
A1  - Gerhard, Reimund
A1  - Taylor, D. M.
T1  - Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
T2  - Applied physics letters
N2  - Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.
Y1  - 2011
UR  - https://publishup.uni-potsdam.de/frontdoor/index/index/docId/37073
SN  - 0003-6951
VL  - 98
IS  - 3
PB  - American Institute of Physics
CY  - Melville
ER  -